Package process of stacked type semiconductor device package structure
First Claim
1. A package process, comprising:
- disposing a semiconductor substrate on a carrier, wherein the semiconductor substrate has a first surface facing the carrier and plural contacts on the first surface, and the semiconductor substrate is bonded to the carrier with a passivation layer on the first surface;
thinning the semiconductor substrate from a back side of the semiconductor substrate in opposite to the first surface, wherein the thinned semiconductor substrate has a second surface opposite to the first surface;
forming plural through silicon vias in the thinned semiconductor substrate, wherein the through silicon vias respectively correspond to and connect to the contacts;
forming plural first pads on the second surface of the semiconductor substrate, wherein the first pads respectively correspond to and connect to the through silicon vias;
bonding plural chips to the second surface of the semiconductor substrate, wherein the chips respectively electrically connect to the corresponding first pads;
forming a molding compound on the second surface of the semiconductor substrate, wherein the molding compound covers the chips and the first pads;
separating the semiconductor substrate and the carrier, wherein the passivation layer is remained on the first surface of the semiconductor substrate;
forming a redistribution layer on the passivation layer after the semiconductor substrate and the carrier are separated, wherein a surface of the redistribution layer has plural second pads, and the second pads respectively electrically connect to the contacts;
forming plural solder balls on the first surface of the semiconductor substrate, wherein the solder balls respectively electrically connect to the corresponding contacts; and
simultaneously sawing the molding compound and the semiconductor substrate to form a plurality of package units.
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Accused Products
Abstract
A package process is provided. The package process includes: disposing a semiconductor substrate on a carrier, wherein the semiconductor substrate has plural contacts at a side facing the carrier; thinning the semiconductor substrate from a back side of the semiconductor substrate and then forming plural through silicon vias in the thinned semiconductor substrate; forming plural first pads on the semiconductor substrate, wherein the first pads respectively connected to the through silicon vias; bonding plural chips to the semiconductor substrate, wherein the chips are electrically connected to the corresponding pads; forming a molding compound on the semiconductor substrate to cover the chips and the first pads; separating the semiconductor substrate and the carrier and then forming plural solder balls on the semiconductor substrate; and sawing the molding compound and the semiconductor substrate.
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Citations
8 Claims
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1. A package process, comprising:
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disposing a semiconductor substrate on a carrier, wherein the semiconductor substrate has a first surface facing the carrier and plural contacts on the first surface, and the semiconductor substrate is bonded to the carrier with a passivation layer on the first surface; thinning the semiconductor substrate from a back side of the semiconductor substrate in opposite to the first surface, wherein the thinned semiconductor substrate has a second surface opposite to the first surface; forming plural through silicon vias in the thinned semiconductor substrate, wherein the through silicon vias respectively correspond to and connect to the contacts; forming plural first pads on the second surface of the semiconductor substrate, wherein the first pads respectively correspond to and connect to the through silicon vias; bonding plural chips to the second surface of the semiconductor substrate, wherein the chips respectively electrically connect to the corresponding first pads; forming a molding compound on the second surface of the semiconductor substrate, wherein the molding compound covers the chips and the first pads; separating the semiconductor substrate and the carrier, wherein the passivation layer is remained on the first surface of the semiconductor substrate; forming a redistribution layer on the passivation layer after the semiconductor substrate and the carrier are separated, wherein a surface of the redistribution layer has plural second pads, and the second pads respectively electrically connect to the contacts; forming plural solder balls on the first surface of the semiconductor substrate, wherein the solder balls respectively electrically connect to the corresponding contacts; and simultaneously sawing the molding compound and the semiconductor substrate to form a plurality of package units. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification