Shield contacts in a shielded gate MOSFET
First Claim
1. A method of forming a shielded gate MOSFET, the method comprising:
- forming trenches in a semiconductor region;
forming a shield electrode in each trench;
forming gate electrodes in a portion of the trenches, the portion of the trenches forming an active region, wherein each gate electrode is disposed over the shield electrode and is isolated from the shield electrode by an inter-electrode dielectric; and
forming an interconnect layer extending over the trenches, the interconnect layer being isolated from the gate electrodes in the active region by a dielectric layer, the interconnect layer contacting the shield electrodes in a shield contact region separate from the active region and contacting mesa surfaces between adjacent trenches in the shield contact region.
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Accused Products
Abstract
A semiconductor structure is formed as follows. Trenches are formed in a semiconductor region and a shield electrode is formed in each trench. Gate electrodes are formed in a portion of the trenches that form an active region. Each gate electrode is disposed over the shield electrode and is isolated from the shield electrode by an inter-electrode dielectric. An interconnect layer is formed extending over the trenches. The interconnect layer is isolated from the gate electrodes in the active region by a dielectric layer and contacts the shield electrodes in a shield contact region separate from the active region. The interconnect layer contacts mesa surfaces between adjacent trenches in the shield contact region.
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Citations
20 Claims
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1. A method of forming a shielded gate MOSFET, the method comprising:
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forming trenches in a semiconductor region; forming a shield electrode in each trench; forming gate electrodes in a portion of the trenches, the portion of the trenches forming an active region, wherein each gate electrode is disposed over the shield electrode and is isolated from the shield electrode by an inter-electrode dielectric; and forming an interconnect layer extending over the trenches, the interconnect layer being isolated from the gate electrodes in the active region by a dielectric layer, the interconnect layer contacting the shield electrodes in a shield contact region separate from the active region and contacting mesa surfaces between adjacent trenches in the shield contact region. - View Dependent Claims (2, 3, 4)
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5. A method of forming a semiconductor structure comprising:
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forming an active region comprising trenches extending into a semiconductor region, each trench including a shield electrode in a bottom portion of the trench, a gate electrode in an upper portion of the trench over the shield electrode, and an inter-electrode dielectric layer extending between the shield electrode and the gate electrode; forming a shield contact region surrounded by the active region, the shield contact region comprising at least one contact trench extending into the semiconductor region, wherein the shield electrode from at least one of the trenches in the active region extends along a length of the contact trench; and forming an interconnect layer extending over the active region and the shield contact region, wherein in the active region the interconnect layer is isolated from the gate electrode in each of the trenches by a dielectric layer and the interconnect layer contacts mesa surfaces of the semiconductor region adjacent to the trenches, and in the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a semiconductor structure comprising:
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forming first and second active regions each comprising trenches extending into a semiconductor region, wherein each trench includes a shield electrode in a bottom portion of the trench, a gate electrode in an upper portion of the trench over the shield electrode, and an inter-electrode dielectric layer extending between the shield electrode and the gate electrode; forming a shield contact region between the first and second active regions, the shield contact region comprising at least one contact trench extending into the semiconductor region, wherein the shield electrode from at least one of the trenches in the first active region extends along a length of the contact trench; and forming an interconnect layer extending over the first and second active regions and the contact region, wherein in the first and second active regions the interconnect layer is isolated from the gate electrode in each of the trenches by a dielectric layer and the interconnect layer contacts mesa surfaces of the semiconductor region adjacent to the trenches, and in the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification