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Method for fabricating semiconductor device

  • US 8,338,290 B2
  • Filed: 06/17/2011
  • Issued: 12/25/2012
  • Est. Priority Date: 01/15/2009
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:

  • (a) forming an interlayer insulating film on a substrate;

    (b) forming an interconnect in the interlayer insulating film;

    (c) feeding an organic solution to an upper surface of the interconnect and an upper surface of the interlayer insulating film;

    (d) after (c), feeding a silylating solution to the upper surface of the interconnect and the upper surface of the interlayer insulating film;

    (e) after (d), heating the substrate; and

    (f) forming a first liner insulating film at least on the upper surface of the interconnect.

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