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Method for nondestructive lift-off of GaN from sapphire substrate utilizing a solid-state laser

  • US 8,338,313 B2
  • Filed: 04/21/2009
  • Issued: 12/25/2012
  • Est. Priority Date: 11/07/2008
  • Status: Active Grant
First Claim
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1. A method for non-destructively lifting a III-V semiconductor device from a sapphire substrate, comprising:

  • obtaining a III-V semiconductor layer grown on a sapphire substrate at an interface;

    irradiating a laser beam through the sapphire substrate, wherein the laser beam forms a laser spot at the interface between the III-V semiconductor layer and the sapphire substrate, wherein the laser spot has a distance between two farthest corners or a longest diameter smaller than 400 μ

    m; and

    scanning the laser beam across the interface between the III-V semiconductor layer and the sapphire substrate to form a plurality of laser spots at the interface to non-destructively separate the III-V semiconductor layer from the sapphire substrate, wherein the distance between the centers of adjacent laser spots at the interface is in a range of about 30 μ

    m and about 100 μ

    m.

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