Gas cluster ion beam system with rapid gas switching apparatus

• US 8,338,806 B2
• Filed: 05/05/2010
• Issued: 12/25/2012
• Est. Priority Date: 05/05/2010
• Status: Active Grant

• Current Assignee: TEL Manufacturing and Engineering of America, Inc.
• Original Assignee: TEL Epion Inc. (Tokyo Electron Limited)
• Inventors: Graf, Michael, Becker, Robert K., Reddy, Christopher T., Russell, Noel
• Primary Examiner(s): Johnston, Phillip A
• Application Number:
  US12/774,051
• Publication Number:
  US 20110272594A1
• Time in Patent Office: 965 Days
• Field of Search: 250/492.3
• US Class Current: 250/492.3
• CPC Class Codes: H01J 2237/006 Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608
• CPC Class Codes: H01J 2237/0812 Ionized cluster beam [ICB] sources
• CPC Class Codes: H01J 27/026 Cluster ion sources
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412

Abstract

A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.

Claims

1. A processing system for irradiating a substrate with a gas cluster ion beam (GCIB), the system comprising:

a first nozzle for forming and emitting gas clusters beams through an outlet thereof, and a stagnation chamber upstream of and adjacent the first nozzle and having an inlet, the first nozzle being configured to direct a gas cluster beam toward the substrate;

an ionizer positioned downstream of the outlet and configured to ionize the gas cluster beam to form the GCIB;

a first gas supply in fluid communication with the inlet of the stagnation chamber and including a first gas source and a first valve between the first gas source and the first nozzle for controlling flow of a first gas between the first gas source and the first nozzle; and

a second gas supply in fluid communication with the inlet of the stagnation chamber and including a second gas source and a second valve between the second gas source and the stagnation chamber for controlling flow of a second gas between the second gas source and the first nozzle,

wherein the first and second valves are positioned to define a common gas-holding volume between the first and second valves and the inlet of the stagnation chamber, the common gas-holding volume being less than about 2 cm³ to thereby enable rapid evacuation and switching of gas to the first nozzle between the first gas and the second gas without mixing the first and second gases, and

wherein the first and second valves are actuatable to permit selective supply of the first gas from the first gas source or the second gas from the second gas source.

2. The system of claim 1, wherein the common gas-holding volume is less than about 0.5 cm³.

3. The system of claim 1, further comprising:

a vacuum line downstream of the first nozzle and in fluid communication therewith through an evacuation valve, the evacuation valve being configured to evacuate the first or second gas from the common gas-holding volume and from the stagnation chamber through the outlet of the first nozzle.

4. The system of claim 3, further comprising:

a purging gas supply including a source of purging gas in fluid communication with the common gas-holding volume through a purging gas valve, the purging gas valve being selectively actuatable and cooperating with the evacuation valve to flush the common gas-holding volume and the stagnation chamber through the outlet of the first nozzle.

5. The system of claim 3, wherein the second gas supply is configured to supply a purging gas to the common gas-holding volume, the second valve being selectively actuatable and cooperating with the evacuation valve to flush the common gas-holding volume and the stagnation chamber with the purging gas through the outlet of the first nozzle.

6. The system of claim 1, further comprising;

a roughing line in fluid communication with the first nozzle through an evacuation valve located upstream of the first nozzle, the evacuation valve being selectively actuatable to evacuate the first gas from the first nozzle through the inlet of the stagnation chamber.

7. The system of claim 6, further comprising:

a restrictor located between the evacuation valve and the roughing line for controlling the pressure of gas flowing through the inlet of the stagnation chamber into the roughing line.

8. The system of claim 1, further comprising:

a roughing line in fluid communication with the first nozzle through an evacuation valve located upstream of the first nozzle and with the outlet of the first nozzle through a vacuum pump;

an exhaust line downstream of and in fluid communication with the roughing line; and

a venturi valve in the flow path between the evacuation valve and the exhaust line for controlling the pressure of the first or second gas flowing through the inlet of the stagnation chamber into the exhaust line.

9. The system of claim 1, further comprising:

at least one of

a vacuum line downstream of the first nozzle and in fluid communication therewith through a first evacuation valve, the first evacuation valve being configured to evacuate the first or second gas from the stagnation chamber through the outlet of the first nozzle, or

a roughing line in fluid communication with the first nozzle through a second evacuation valve located upstream of the first nozzle, the second evacuation valve being selectively actuatable to evacuate the first or second gas from the stagnation chamber through the inlet thereof,

wherein at least one of the first evacuation valve or the second evacuation valve is configured to substantially evacuate the common gas-holding volume and the stagnation chamber in a period of time less than about 10 seconds.

10. The system of claim 9, wherein the at least one of the first evacuation valve or the second evacuation valve is configured to substantially evacuate the common gas-holding volume and the stagnation chamber in a period of time less than about 5 seconds.

11. The system of claim 1, wherein the first gas supply includes a primary feed valve located between the first gas source and the first valve, the primary feed valve being actuatable and cooperating with the first valve to pressurize a feed holding volume defined between the primary feed valve and the first valve.

12. The system of claim 11, further comprising:

a controller operatively coupled to the primary feed valve; and

a feed sensor operatively coupled to the controller and configured to sense a pressure of gas in the feed holding volume, the sensor being further configured to generate a signal to the controller associated with the sensed pressure and the controller being configured, in response to the signal, to actuate the primary feed valve.

13. The system of claim 12, wherein the controller is operatively coupled to the first valve, the system further comprising:

a user interface operatively coupled to the controller and configured to receive from the user a desired volume of the first gas to be supplied to the first nozzle, the controller being configured, in response to the received desired volume, to actuate at least one of the first valve or the primary feed valve to attain, in the feed holding volume, a predetermined pressure associated with the received desired volume.

14. A processing system for irradiating a substrate with a gas cluster ion beam (GCIB), the system comprising:

a first nozzle for forming and emitting gas clusters beams through an outlet thereof, and a stagnation chamber upstream of and adjacent the first nozzle and having an inlet, the first nozzle being configured to direct a gas cluster beam toward the substrate;

an ionizer positioned downstream of the outlet and configured to ionize the gas cluster beam to form the GCIB;

a first gas supply in fluid communication with the inlet of the stagnation chamber and including a first gas source and a first valve between the first gas source and the first nozzle for controlling flow of a first gas between the first gas source and the first nozzle; and

a second gas supply in fluid communication with the inlet of the stagnation chamber and including a second gas source and a second valve between the second gas source and the stagnation chamber for controlling flow of a second gas between the second gas source and the first nozzle,

a second nozzle for forming and emitting gas clusters beams, the first and second nozzles being arranged in mutually close proximity to one another to at least partially coalesce the gas cluster beams emitted from the first and second nozzles into a single gas cluster beam and to direct the single gas cluster beam toward the substrate, the second nozzle being in fluid communication with the first and second gas supplies to selectively receive the first or second gas therefrom,

wherein the first and second valves are positioned to define a common gas-holding volume between the first and second valves and the inlet of the stagnation chamber, the common gas-holding volume being less than about 2 cm³, and

wherein the first and second valves are actuatable to permit selective supply of the first gas from the first gas source or the second gas from the second gas source.

15. The system of claim 14, further comprising:

a third gas supply and a fourth gas supply, each in fluid communication with the first and second nozzles to selectively supply respective third and fourth gases thereto, each of the first and second nozzles being configured to selectively emit gas cluster beams from gas received from one or more of the first, second, third or fourth gas supplies.

16. A processing system for irradiating a substrate with a gas cluster ion beam (GCIB), the system comprising:

at least a first nozzle and a second nozzle for forming and emitting gas clusters beams through respective first and second outlets thereof, and first and second stagnation chambers upstream of and adjacent the first and second nozzles respectively and having respective first and second inlets, the first and second nozzles being arranged in mutually close proximity to one another to at least partially coalesce the gas cluster beams emitted from the first and second nozzles into a single gas cluster beam and to direct the single gas cluster beam toward the substrate;

an ionizer positioned downstream of the first and second outlets and configured to ionize the single gas cluster beam to form the GCIB;

a first gas supply in fluid communication with the first and second inlets of the first and second stagnation chambers, the first gas supply including a first gas source and a first pair of valves between the first gas source and each of the first and second nozzles for controlling flow of a first gas between the first gas source and the first and second nozzles, respectively; and

a second gas supply in fluid communication with the first and second inlets of the first and second stagnation chambers, the second gas supply including a second gas source and a second pair of valves between the second gas source and each of the first and second nozzles for controlling flow of a second gas between the second gas source and the first and second nozzles, respectively, wherein;

the first and second pairs of valves are positioned so as to define a first common gas-holding volume between one of the valves of the first pair, one of the valves of the second pair, and the first inlet of the first stagnation chamber, and a second common gas-holding volume between the other of the valves of the first pair, the other of the valves of the second pair, and the second inlet of the second stagnation chamber, at least one of the first or second common gas-holding volumes being less than about 2 cm³, and

actuation of each of the first and second pairs of valves is effective to permit selective supply of the first or second gases, respectively, from the first or second gas source to the first or second nozzle.

17. The system of claim 16, wherein at least one of the first or second common gas-holding volumes is less than about 0.5 cm³.

18. A method of supplying gas in a processing system used to irradiate a substrate with a gas cluster ion beam (GCIB), the method comprising:

supplying a first gas from a first gas source to a first nozzle through a first valve and through an inlet of a stagnation chamber upstream of and adjacent the first nozzle, the first valve being in fluid communication with a second valve fluidly coupled to a second gas source such that the first valve, the second valve, and the inlet of the stagnation chamber jointly define a common gas-holding volume there between less than about 2 cm³ to thereby enable rapid evacuation and switching of gas to the first nozzle between the first gas and the second gas without mixing the first and second gases, the first nozzle being configured to form and emit a gas cluster beam through an outlet thereof and to direct the gas cluster beam toward the substrate;

directing the gas cluster beam through an ionizer positioned downstream of the outlet to ionize the gas cluster beam and thereby form the GCIB;

closing the first valve to thereby interrupt flow of the first gas from the first gas source to the first nozzle;

evacuating the first gas from the common gas-holding volume and from the stagnation chamber through an evacuation valve; and

opening the second valve to supply a second gas from the second gas source to the first nozzle through the common gas-holding volume.

19. The method of claim 18, further comprising:

actuating the evacuation valve to substantially evacuate the first gas from the stagnation chamber and from the common gas-holding volume in a period of time less than about 10 seconds.

20. The method of claim 19, wherein actuation of the evacuation valve is effective to substantially evacuate the first gas from the stagnation chamber and from the common gas-holding volume in a period of time less than about 5 seconds.

21. The method of claim 18, further comprising:

interrupting the supply of the second gas to the first nozzle; and

directing flow of the second gas to a second nozzle for forming and emitting gas cluster beams, the first and second nozzles being arranged in mutually close proximity to one another to at least partially coalesce the gas cluster beams emitted from the first and second nozzles into a single gas cluster beam and to direct the single gas cluster beam toward the substrate.

22. The method of claim 21, further comprising:

selectively supplying a third gas and a fourth gas respectively from third and fourth sources of gas, the first and second nozzles being configured to selectively emit gas cluster beams from gas received from one or more of the first, second, third or fourth sources of gas.

23. The method of claim 18, wherein the second gas is a purging gas selected from the group consisting of NF₂, N₂, NF₃, Ar, O₂, C₃F₈, CF₄, and C₂F₆.

24. The method of claim 18, further comprising:

selectively supplying to the first nozzle a purging gas from a purging gas source different from the first and second sources of gas, the purging gas source being in fluid communication with the first nozzle through a purging gas valve cooperating with the evacuation valve to permit the flow of the purging gas and of the first gas or the second gas through the outlet of the first nozzle.

25. The method of claim 18, wherein the second gas source includes a primary feed valve defining a feed holding volume between the primary feed valve and the second valve, the method further comprising:

sensing a pressure of the second gas in the feed holding volume; and

pressurizing the second gas in the feed holding volume in response to the sensing.

26. The method of claim of claim 25, further comprising:

selecting a desired volume of the second gas to be supplied to the first nozzle;

automatically identifying a pressure of the second gas in the feed holding volume corresponding to the selected desired volume; and

automatically pressurizing the second gas in the feed holding volume to the identified pressure.

27. The method of claim 18, wherein:

the evacuation valve is located downstream of the first nozzle, and

the evacuation valve is configured to cause the first gas to be drawn from the stagnation chamber and from the common gas-holding volume through the outlet of the first nozzle.

28. The method of claim 18, wherein:

the evacuation valve is located upstream of the first nozzle, and

the evacuation valve is configured to cause the first gas to flow upstream from the stagnation chamber through the inlet thereof.

29. The method of claim 28, further comprising:

directing flow of the first gas upstream toward a roughing line; and

restricting flow of the first gas upstream of the evacuation valve to thereby control pressure of the first gas flowing into the roughing line.