Light emitting device, method of manufacturing the same, light emitting device package and lighting system
First Claim
1. A light emitting device comprising:
- a first semiconductor layer;
an active layer to generate a light on the first semiconductor layer;
a second conductive semiconductor layer on the active layer;
a transparent electrode layer on the second conductive semiconductor layer; and
a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time,wherein the second conductive semiconductor layer has a thickness satisfying following equation 1;
2·
Φ
1+Φ
2=N·
2π
±
Δ
, (0≦
Δ
≦
π
/2)
Equation 1wherein, Φ
1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as Φ
1=2π
nd/λ
(n is a refractive index of the light, λ
is a wavelength of the light, and d is a thickness of the second conductive semiconductor layer), Φ
2 is a phase shift occurring when the light is reflected from one of the transparent electrode layer and the multiple thin film mirror, and N is a natural number.
2 Assignments
0 Petitions
Accused Products
Abstract
A light emitting device according to the embodiment includes a first semiconductor layer; an active layer to generate a light on the first semiconductor layer; a second conductive semiconductor layer on the active layer; a transparent electrode layer on the second conductive semiconductor layer; and a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time, wherein the second conductive semiconductor layer has a thickness satisfying: 2·Φ1+Φ2=N·2π±Δ, (0≦Δ≦π/2) in which, Φ1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as Φ1=2πnd/λ (n is a refractive index of the light, λ is a wavelength of the light, and d is a thickness of the second conductive semiconductor layer), Φ2 is a phase shift occurring when the light is reflected from one of the transparent electrode layer and the multiple thin film mirror, and N is a natural number.
6 Citations
20 Claims
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1. A light emitting device comprising:
-
a first semiconductor layer; an active layer to generate a light on the first semiconductor layer; a second conductive semiconductor layer on the active layer; a transparent electrode layer on the second conductive semiconductor layer; and a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time, wherein the second conductive semiconductor layer has a thickness satisfying following equation 1;
2·
Φ
1+Φ
2=N·
2π
±
Δ
, (0≦
Δ
≦
π
/2)
Equation 1wherein, Φ
1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as Φ
1=2π
nd/λ
(n is a refractive index of the light, λ
is a wavelength of the light, and d is a thickness of the second conductive semiconductor layer), Φ
2 is a phase shift occurring when the light is reflected from one of the transparent electrode layer and the multiple thin film mirror, and N is a natural number. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light emitting device package comprising:
-
a body; first and second electrode layers on the body; a light emitting device electrically connected to the first and second electrode layers on the body; and a molding member surrounding the light emitting device, wherein the light emitting device comprises; a first semiconductor layer; an active layer to generate a light on the first semiconductor layer; a second conductive semiconductor layer on the active layer; a transparent electrode layer on the second conductive semiconductor layer; and a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time, and wherein the second conductive semiconductor layer has a thickness satisfying following equation 1;
2·
Φ
1+Φ
2=N·
2π
±
Δ
, (0≦
Δ
≦
π
/2)
Equation 2wherein, Φ
1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as Φ
1=2π
nd/λ
(n is a refractive index of the light, λ
is a wavelength of the light, and d is a thickness of the second conductive semiconductor layer), Φ
2 is a phase shift occurring when the light is reflected from one of the transparent electrode layer and the multiple thin film mirror, and N is a natural number. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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- Resources
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
-
Original AssigneeLG Innotek Company Limited (LG Corporation)
-
InventorsKim, Sun Kyung
-
Primary Examiner(s)Lee, Cheung
-
Assistant Examiner(s)JOY, JEREMY J
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Application NumberUS13/091,505Publication NumberTime in Patent Office614 DaysField of Search257/96, 257/E23.068, 257/E51.021, 438/29US Class Current257/98CPC Class CodesH01L 2224/48091 ArchedH01L 2224/48247 connecting the wire to a bo...H01L 2924/00014 the subject-matter covered ...H01L 33/10 with a light reflecting str...H01L 33/46 Reflective coating, e.g. di...
