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Backside illuminated image sensor with stressed film

  • US 8,338,856 B2
  • Filed: 08/10/2010
  • Issued: 12/25/2012
  • Est. Priority Date: 08/10/2010
  • Status: Active Grant
First Claim
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1. A backside illuminated (“

  • BSI”

    ) complementary metal-oxide semiconductor (“

    CMOS”

    ) image sensor, comprising;

    a photosensitive region disposed within a semiconductor layer, the photosensitive region sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge; and

    a first stress adjusting layer disposed on a backside of the semiconductor layer establishing a first stress characteristic to encourage photo-generated charge carriers to migrate towards the photosensitive region,wherein the first stress adjusting layer is disposed on the semiconductor layer to apply a patterned stress characteristic to the semiconductor layer such that the first stress adjusting layer applies the first stress characteristic to a first portion of the BSI CMOS image sensor on the backside of the semiconductor layer and while substantially not applying the first stress characteristic to a second portion of the BSI CMOS image sensor on the backside of the semiconductor layer.

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