Backside illuminated image sensor with stressed film
First Claim
Patent Images
1. A backside illuminated (“
- BSI”
) complementary metal-oxide semiconductor (“
CMOS”
) image sensor, comprising;
a photosensitive region disposed within a semiconductor layer, the photosensitive region sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge; and
a first stress adjusting layer disposed on a backside of the semiconductor layer establishing a first stress characteristic to encourage photo-generated charge carriers to migrate towards the photosensitive region,wherein the first stress adjusting layer is disposed on the semiconductor layer to apply a patterned stress characteristic to the semiconductor layer such that the first stress adjusting layer applies the first stress characteristic to a first portion of the BSI CMOS image sensor on the backside of the semiconductor layer and while substantially not applying the first stress characteristic to a second portion of the BSI CMOS image sensor on the backside of the semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.
61 Citations
15 Claims
-
1. A backside illuminated (“
- BSI”
) complementary metal-oxide semiconductor (“
CMOS”
) image sensor, comprising;a photosensitive region disposed within a semiconductor layer, the photosensitive region sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge; and a first stress adjusting layer disposed on a backside of the semiconductor layer establishing a first stress characteristic to encourage photo-generated charge carriers to migrate towards the photosensitive region, wherein the first stress adjusting layer is disposed on the semiconductor layer to apply a patterned stress characteristic to the semiconductor layer such that the first stress adjusting layer applies the first stress characteristic to a first portion of the BSI CMOS image sensor on the backside of the semiconductor layer and while substantially not applying the first stress characteristic to a second portion of the BSI CMOS image sensor on the backside of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- BSI”
-
13. A backside illuminated (“
- BSI”
) complementary metal-oxide semiconductor (“
CMOS”
) image sensor, comprising;a photosensitive region disposed within a semiconductor layer, the photosensitive region sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge; a first stress adjusting layer disposed on a backside of the semiconductor layer establishing a first stress characteristic to encourage photo-generated charge carriers to migrate towards the photosensitive region; and a second stress adjusting layer disposed on the first stress adjusting layer, wherein the first and second stress adjusting layers together impart a combined stress characteristic on the semiconductor layer.
- BSI”
-
14. A backside illuminated (“
- BSI”
) complementary metal-oxide semiconductor (“
CMOS”
) image sensor, comprising;a photosensitive region disposed within a semiconductor layer, the photosensitive region sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge; and a first stress adjusting layer disposed on a backside of the semiconductor layer establishing a first stress characteristic to encourage photo-generated charge carriers to migrate towards the photosensitive region, wherein the first stress adjusting layer has an antireflective property.
- BSI”
-
15. A backside illuminated (“
- BSI”
) complementary metal-oxide semiconductor (“
CMOS”
) image sensor, comprising;a photosensitive region disposed within a semiconductor layer, the photosensitive region sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge; a first stress adjusting layer disposed on a backside of the semiconductor layer establishing a first stress characteristic to encourage photo-generated charge carriers to migrate towards the photosensitive region; a metal stack disposed over a frontside of the semiconductor layer; and a second stress adjusting layer disposed over the metal stack to impart a second stress characteristic to the BSI CMOS image sensor from a frontside of the pixel.
- BSI”
Specification