Semiconductor memory device and method for manufacturing same
First Claim
1. A semiconductor memory device comprising:
- a base including a substrate and a peripheral circuit formed on a surface of the substrate;
a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked above the base;
a memory film provided on an inner wall of a memory hole punched through the stacked body to reach a lowermost layer of the conductive layers and including a charge storage film;
a channel body provided on an inside of the memory film in the memory hole;
an interconnection provided below the stacked body, and electrically connecting the lowermost layer of the conductive layers in an interconnection region laid out on an outside of a memory cell array region, wherein the memory cell array region having the memory film and the channel body and the peripheral circuit; and
a contact plug piercing the stacked body in the interconnection region to reach the lowermost layer of the conductive layers in the interconnection region; and
wherein the channel body is formed in a U-shaped configuration including;
a pair of columns extending in a stack direction of the stacked body; and
a connection buried in the lowermost layer of the conductive layers in the memory cell array region and connecting the pair of columns.
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Accused Products
Abstract
According to one embodiment, a semiconductor memory device includes a base, a stacked body, a memory film, a channel body, an interconnection, and a contact plug. The base includes a substrate and a peripheral circuit formed on a surface of the substrate. The stacked body includes a plurality of conductive layers and a plurality of insulating layers alternately stacked above the base. The memory film is provided on an inner wall of a memory hole punched through the stacked body to reach a lowermost layer of the conductive layers. The memory film includes a charge storage film. The interconnection is provided below the stacked body. The interconnection electrically connects the lowermost layer of the conductive layers in an interconnection region laid out on an outside of a memory cell array region and the peripheral circuit. The contact plug pierces the stacked body in the interconnection region to reach the lowermost layer of the conductive layers in the interconnection region.
207 Citations
11 Claims
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1. A semiconductor memory device comprising:
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a base including a substrate and a peripheral circuit formed on a surface of the substrate; a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked above the base; a memory film provided on an inner wall of a memory hole punched through the stacked body to reach a lowermost layer of the conductive layers and including a charge storage film; a channel body provided on an inside of the memory film in the memory hole; an interconnection provided below the stacked body, and electrically connecting the lowermost layer of the conductive layers in an interconnection region laid out on an outside of a memory cell array region, wherein the memory cell array region having the memory film and the channel body and the peripheral circuit; and a contact plug piercing the stacked body in the interconnection region to reach the lowermost layer of the conductive layers in the interconnection region; and wherein the channel body is formed in a U-shaped configuration including;
a pair of columns extending in a stack direction of the stacked body; and
a connection buried in the lowermost layer of the conductive layers in the memory cell array region and connecting the pair of columns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor memory device comprising:
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a base including a substrate and a peripheral circuit formed on a surface of the substrate; a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked above the base; a memory film provided on an inner wall of a memory hole punched through the stacked body to reach a lowermost layer of the conductive layers and including a charge storage film; a channel body provided on an inside of the memory film in the memory hole; an interconnection provided below the stacked body, and electrically connecting the lowermost layer of the conductive layers in an interconnection region laid out on an outside of a memory cell array region, wherein the memory cell array region having the memory film and the channel body and the peripheral circuit; a contact plug piercing the stacked body in the interconnection region to reach the lowermost layer of the conductive layers in the interconnection region; and wherein the lowermost layer of the conductive layers in the interconnection region connected to the contact plug and the interconnection is formed as a pad having a larger planar size than a line width of the interconnection.
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Specification