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Semiconductor device with (110)-oriented silicon

  • US 8,338,886 B2
  • Filed: 12/16/2011
  • Issued: 12/25/2012
  • Est. Priority Date: 09/27/2007
  • Status: Active Grant
First Claim
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1. A vertical semiconductor device, comprising:

  • a bottom metal layer;

    a first P-type semiconductor layer overlying the bottom metal layer, the first P-type semiconductor layer being characterized by a surface crystal orientation of (110) and a first conductivity, the first P-type semiconductor layer being heavily doped;

    a second P-type semiconductor layer overlying the first P-type semiconductor layer, the second semiconductor layer having a surface crystal orientation of (110) and being characterized by a lower conductivity than the first conductivity; and

    a top metal layer overlying the second P-type semiconductor layer,wherein a current conduction from the top metal layer to the bottom metal layer and through the second p-type semiconductor layer is characterized by a hole mobility along a <

    110>

    crystalline orientation and on (110) crystalline plane.

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