Semiconductor device having an InGaN layer
First Claim
Patent Images
1. A method for the manufacture of a vertical optoelectronic structure comprising:
- providing a stack comprising a first substrate and a relaxed InGaN seed layer;
growing an InGaN layer on the relaxed InGaN seed layer to obtain an InGaN-on-substrate structure;
forming a first mirror layer overlaying a surface of the InGaN layer opposite the first substrate;
detaching the first substrate from the InGaN layer and the first mirror layer; and
forming a second mirror layer overlaying the InGaN layer;
wherein the stack is formed by;
growing the InGaN seed layer on a second substrate;
bonding the grown InGaN seed layer to a third substrate by a bonding layer comprising a borophosphosilicate glass;
relaxing the InGaN seed layer by heat treatment before or after removal of the second substrate; and
transferring the relaxed InGaN seed layer to the first substrate by means of a dielectric layer.
2 Assignments
0 Petitions
Accused Products
Abstract
The present invention relates to a method that involves providing a stack of a first substrate and a InGaN seed layer formed on the first substrate, growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure, forming a first mirror layer overlaying the exposed surface of the grown InGaN layer, attaching a second substrate to the exposed surface of the mirror layer, detaching the first substrate from the InGaN seed layer and grown InGaN layer to expose a surface of the InGaN seed layer opposite the first mirror layer, and forming a second mirror layer overlaying the opposing surface of the InGaN seed layer.
-
Citations
18 Claims
-
1. A method for the manufacture of a vertical optoelectronic structure comprising:
-
providing a stack comprising a first substrate and a relaxed InGaN seed layer; growing an InGaN layer on the relaxed InGaN seed layer to obtain an InGaN-on-substrate structure; forming a first mirror layer overlaying a surface of the InGaN layer opposite the first substrate; detaching the first substrate from the InGaN layer and the first mirror layer; and forming a second mirror layer overlaying the InGaN layer; wherein the stack is formed by; growing the InGaN seed layer on a second substrate; bonding the grown InGaN seed layer to a third substrate by a bonding layer comprising a borophosphosilicate glass; relaxing the InGaN seed layer by heat treatment before or after removal of the second substrate; and transferring the relaxed InGaN seed layer to the first substrate by means of a dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification