Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming a gate electrode layer over a substrate;
forming a gate insulating film comprising silicon oxide over the gate electrode layer;
forming an oxide semiconductor film containing indium and zinc over the gate insulating film;
forming a second insulating film comprising silicon oxide over the oxide semiconductor film;
forming a channel protective layer over a channel formation region of the oxide semiconductor film by selectively etching the second insulating film;
forming a film having n-type conductivity over the oxide semiconductor film;
forming a conductive film over the film having n-type conductivity;
forming a resist mask over the conductive film; and
etching the conductive film, the film having n-type conductivity, and the oxide semiconductor film using the resist mask formed over the conductive film formed over the film having n-type conductivity formed over the channel protective layer to form source and drain electrode layers and a semiconductor layer,wherein each of the gate insulating film, the oxide semiconductor film and the second insulating film is formed by sputtering in an atmosphere containing oxygen at 90% or more.
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Accused Products
Abstract
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
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Citations
41 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode layer over a substrate; forming a gate insulating film comprising silicon oxide over the gate electrode layer; forming an oxide semiconductor film containing indium and zinc over the gate insulating film; forming a second insulating film comprising silicon oxide over the oxide semiconductor film; forming a channel protective layer over a channel formation region of the oxide semiconductor film by selectively etching the second insulating film; forming a film having n-type conductivity over the oxide semiconductor film; forming a conductive film over the film having n-type conductivity; forming a resist mask over the conductive film; and etching the conductive film, the film having n-type conductivity, and the oxide semiconductor film using the resist mask formed over the conductive film formed over the film having n-type conductivity formed over the channel protective layer to form source and drain electrode layers and a semiconductor layer, wherein each of the gate insulating film, the oxide semiconductor film and the second insulating film is formed by sputtering in an atmosphere containing oxygen at 90% or more. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film containing indium and zinc over the gate insulating film; forming a second insulating film comprising silicon oxide over the oxide semiconductor film; forming a channel protective layer over a channel formation region of the oxide semiconductor film by selectively etching the second insulating film; forming a conductive film over the oxide semiconductor film; forming a resist mask over the conductive film; and etching the conductive film and the oxide semiconductor film using the resist mask formed over the conductive film to form source and drain electrode layers and a semiconductor layer, wherein each of the gate insulating film, the oxide semiconductor film and the second insulating film is formed by sputtering in an atmosphere containing oxygen at 90% or more. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film containing indium, zinc and excessive oxygen over the gate insulating film; forming a second insulating film comprising silicon oxide over the oxide semiconductor film; forming a channel protective layer over a channel formation region of the oxide semiconductor film by selectively etching the second insulating film; forming a conductive film over the oxide semiconductor film; forming a resist mask over the conductive film; and etching the conductive film and the oxide semiconductor film using the resist mask formed over the conductive film to form source and drain electrode layers and a semiconductor layer. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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34. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film containing indium, zinc and excessive oxygen over the gate insulating film; forming a second insulating film comprising silicon oxide over the oxide semiconductor film; forming a channel protective layer over a channel formation region of the oxide semiconductor film by selectively etching the second insulating film; forming a conductive film over the oxide semiconductor film; forming a resist mask over the conductive film; and etching the conductive film and the oxide semiconductor film using the resist mask formed over the conductive film to form source and drain electrode layers and a semiconductor layer, wherein the gate insulating film contains excessive oxygen and a material selected from the group consisting of silicon oxynitride and silicon nitride oxide. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41)
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Specification