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Gallium nitride material processing and related device structures

  • US 8,343,824 B2
  • Filed: 06/20/2008
  • Issued: 01/01/2013
  • Est. Priority Date: 04/29/2008
  • Status: Expired due to Fees
First Claim
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1. A method of forming a gallium nitride material device structure comprising;

  • forming a gallium nitride material region comprising first and second gallium nitride material layers, the second gallium nitride material layer situated between the first gallium nitride material layer and an underlying region, the underlying region comprising a buffer region;

    forming an implanted region, at least in part, within the first gallium nitride material layer;

    removing at least a portion of the underlying region to expose an N-face of the gallium nitride material region; and

    forming a feature on the N-face of the gallium nitride material region;

    wherein a portion of the gallium nitride material region is removed when exposing the N-face of the gallium nitride material region.

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