Gallium nitride material processing and related device structures
First Claim
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1. A method of forming a gallium nitride material device structure comprising;
- forming a gallium nitride material region comprising first and second gallium nitride material layers, the second gallium nitride material layer situated between the first gallium nitride material layer and an underlying region, the underlying region comprising a buffer region;
forming an implanted region, at least in part, within the first gallium nitride material layer;
removing at least a portion of the underlying region to expose an N-face of the gallium nitride material region; and
forming a feature on the N-face of the gallium nitride material region;
wherein a portion of the gallium nitride material region is removed when exposing the N-face of the gallium nitride material region.
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Abstract
Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.
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Citations
27 Claims
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1. A method of forming a gallium nitride material device structure comprising;
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forming a gallium nitride material region comprising first and second gallium nitride material layers, the second gallium nitride material layer situated between the first gallium nitride material layer and an underlying region, the underlying region comprising a buffer region; forming an implanted region, at least in part, within the first gallium nitride material layer; removing at least a portion of the underlying region to expose an N-face of the gallium nitride material region; and forming a feature on the N-face of the gallium nitride material region; wherein a portion of the gallium nitride material region is removed when exposing the N-face of the gallium nitride material region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method comprising:
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introducing a species within a structure comprising a gallium nitride material region and a region underlying the gallium nitride material region, the region underlying the gallium nitride material region comprising a buffer region, the gallium nitride material region comprising a first gallium nitride material layer and a second gallium nitride material layer, the second gallium nitride material layer situated between the first gallium nitride material layer and the buffer region, the species introduced at least into a portion of the first gallium nitride material layer; removing a portion of the structure including the region underlying the gallium nitride material region to expose an N-face of the gallium nitride material region; and stopping removal of the structure based on detecting an amount of the introduced species. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification