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Method and structure for thin film photovoltaic cell using similar material junction

  • US 8,344,243 B2
  • Filed: 11/18/2009
  • Issued: 01/01/2013
  • Est. Priority Date: 11/20/2008
  • Status: Expired due to Fees
First Claim
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1. A method for forming a thin film photovoltaic device comprising:

  • providing a transparent substrate having a surface;

    forming a first electrode layer over the surface;

    depositing a barrier layer over the first electrode layer to protect the first electrode layer from contamination;

    forming a copper layer over the barrier layer;

    forming an indium layer over the copper layer to form a multi-layered structure comprising the copper layer and the indium layer;

    subjecting the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to thereby form bulk copper indium disulfide material, the bulk copper indium disulfide material comprising a copper poor surface region with n-type impurity characteristic, wherein the copper poor surface region comprises a copper to indium atomic ratio of less than about 0.95;

    1;

    exposing the bulk copper indium disulfide material to an aluminum species to form a p-type copper indium aluminum disulfide material;

    forming a high resistivity transparent material over the copper indium aluminum disulfide material; and

    forming a second electrode layer having a p-type impurity characteristic over the high resistivity transparent layer.

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