Resistive memory device and method of fabricating the same
First Claim
Patent Images
1. A resistive memory device comprising:
- a substrate;
first conductive lines disposed over the substrate to be parallel to each other and extend in a first direction;
second conductive lines disposed over the first conductive lines to be parallel to each other and extend in a second direction across the first direction;
third conductive lines disposed over the second conductive lines to be parallel to each other and extend in the first direction;
a first data storage layer disposed between the first conductive line and the second conductive line;
a second data storage layer disposed between the second conductive line and the third conductive line;
a first oxide layer between the first data storage layer and the second conductive line;
a second oxide layer between the second data storage layer and the third conductive line;
wherein the third conductive line does not overlap the first conductive line in the vertical direction.
1 Assignment
0 Petitions
Accused Products
Abstract
Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.
3 Citations
11 Claims
-
1. A resistive memory device comprising:
-
a substrate; first conductive lines disposed over the substrate to be parallel to each other and extend in a first direction; second conductive lines disposed over the first conductive lines to be parallel to each other and extend in a second direction across the first direction; third conductive lines disposed over the second conductive lines to be parallel to each other and extend in the first direction; a first data storage layer disposed between the first conductive line and the second conductive line; a second data storage layer disposed between the second conductive line and the third conductive line; a first oxide layer between the first data storage layer and the second conductive line; a second oxide layer between the second data storage layer and the third conductive line; wherein the third conductive line does not overlap the first conductive line in the vertical direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
Specification