Semiconductor device comprising oxide semiconductor layer

• US 8,344,374 B2
• Filed: 10/05/2010
• Issued: 01/01/2013
• Est. Priority Date: 10/09/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Takahashi, Masahiro, Kishida, Hideyuki, Miyanaga, Akiharu, Nakamura, Yasuo, Sugao, Junpei, Uochi, Hideki
• Primary Examiner(s): Nguyen, Khiem D
• Application Number:
  US12/898,366
• Publication Number:
  US 20110084268A1
• Time in Patent Office: 819 Days
• Field of Search: 257/43, 257/72, 257/E29.068, 257/E29.151, 257/E51.005, 438149-151
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78669 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

Claims

1. A semiconductor device comprising:

a first insulating layer including silicon nitride;

a first conductive layer over the first insulating layer;

a second conductive layer over the first conductive layer;

a second insulating layer including silicon nitride over the first conductive layer and the second conductive layer;

a third insulating layer including silicon oxide over the second insulating layer;

an oxide semiconductor layer over the third insulating layer;

a source electrode and a drain electrode, which are provided over the oxide semiconductor layer;

a fourth insulating layer including silicon oxide over the source electrode, the drain electrode and the oxide semiconductor layer;

a fifth insulating layer including silicon nitride over the fourth insulating layer;

a third conductive layer over the fifth insulating layer and electrically connected to one of the source electrode and the drain electrode;

a sixth insulating layer including silicon nitride over the third conductive layer; and

a fourth conductive layer over the sixth insulating layer and electrically connected to the other one of the source electrode and the drain electrode,

wherein the first conductive layer and the second conductive layer overlap with the oxide semiconductor layer.

2. The semiconductor device according to claim 1, further comprising a storage capacitor portion, the storage capacitor portion comprises:

a fifth conductive layer including a same material as the first conductive layer, wherein the fifth conductive layer and the first conductive layer are over and in contact with the first insulating layer;

a sixth conductive layer including a same material as the source electrode and the drain electrode, wherein the sixth conductive layer, and the source electrode and the drain electrode are over and in contact with the third insulating layer; and

a part of the second insulating layer and a part of the third insulating layer, which are sandwiched between the fifth conductive layer and the sixth conductive layer.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor layer includes at least one of indium, gallium, and zinc.

4. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode include at least one element selected from the group consisting of W, Ta, Mo, Ti, Cr, Zr, and Ca.

5. The semiconductor device according to claim 1, wherein the second conductive layer includes one element selected from the group consisting of W, Ta, Mo, Ti, and Cr.

6. The semiconductor device according to claim 1, further comprising a fifth conductive layer including Mo under the first conductive layer,

wherein the second conductive layer includes Mo, and

wherein the first conductive layer includes Al and is in contact with the fifth conductive layer and the second conductive layer.

7. The semiconductor device according to claim 1, further comprising a fifth conductive layer including Ti under the first conductive layer,

wherein the second conductive layer includes Ti, and

wherein the first conductive layer includes Al and is in contact with the fifth conductive layer and the second conductive layer.

8. The semiconductor device according to claim 1, further comprising a channel protective layer over and in contact with the oxide semiconductor layer.

9. The semiconductor device according to claim 1, wherein the third conductive layer includes Al.

10. A semiconductor device comprising:

a first insulating layer including silicon nitride;

a first conductive layer over the first insulating layer;

a second conductive layer over the first conductive layer;

a second insulating layer including silicon nitride over the first conductive layer and the second conductive layer;

a third insulating layer including silicon oxide over the second insulating layer;

an oxide semiconductor layer over the third insulating layer;

a source electrode and a drain electrode, which are provided over the oxide semiconductor layer;

a fourth insulating layer including silicon oxide over the source electrode, the drain electrode and the oxide semiconductor layer;

a fifth insulating layer including silicon nitride over the fourth insulating layer;

a third conductive layer over the fifth insulating layer and electrically connected to one of the source electrode and the drain electrode;

a sixth insulating layer including silicon nitride over the third conductive layer; and

a fourth conductive layer over the sixth insulating layer and electrically connected to the other one of the source electrode and the drain electrode,

wherein a melting point of the first conductive layer is smaller than a melting point of the second conductive layer.

11. The semiconductor device according to claim 10, further comprising a storage capacitor portion, the storage capacitor portion comprises:

a fifth conductive layer including a same material as the first conductive layer, wherein the fifth conductive layer and the first conductive layer are over and in contact with the first insulating layer;

a sixth conductive layer including a same material as the source electrode and the drain electrode, wherein the sixth conductive layer, and the source electrode and the drain electrode are over and in contact with the third insulating layer; and

a part of the second insulating layer and a part of the third insulating layer, which are sandwiched between the fifth conductive layer and the sixth conductive layer.

12. The semiconductor device according to claim 10, wherein the oxide semiconductor layer includes at least one of indium, gallium, and zinc.

13. The semiconductor device according to claim 10, wherein the source electrode and the drain electrode include at least one element selected from the group consisting of W, Ta, Mo, Ti, Cr, Zr, and Ca.

14. The semiconductor device according to claim 10, wherein the second conductive layer includes one element selected from the group consisting of W, Ta, Mo, Ti, and Cr.

15. The semiconductor device according to claim 10, wherein the first conductive layer and the second conductive layer overlap with the oxide semiconductor layer.

16. The semiconductor device according to claim 10, further comprising a fifth conductive layer including Mo under the first conductive layer,

wherein the second conductive layer includes Mo, and

wherein the first conductive layer includes Al and is in contact with the fifth conductive layer and the second conductive layer.

17. The semiconductor device according to claim 10, further comprising a fifth conductive layer including Ti under the first conductive layer,

wherein the second conductive layer includes Ti, and

wherein the first conductive layer includes Al and is in contact with the fifth conductive layer and the second conductive layer.

18. The semiconductor device according to claim 10, further comprising a channel protective layer over and in contact with the oxide semiconductor layer.

19. The semiconductor device according to claim 10, wherein the third conductive layer includes Al.