Light emitting device, light emitting device package and lighting system including the same

• US 8,344,401 B2
• Filed: 03/16/2010
• Issued: 01/01/2013
• Est. Priority Date: 03/16/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Cho, Hyun Kyong, Song, Hyun Don, Hong, Chang Hee, Kim, Hyung Gu
• Primary Examiner(s): GEBREMARIAM, SAMUEL A
• Application Number:
  US12/724,791
• Publication Number:
  US 20100230685A1
• Time in Patent Office: 1,022 Days
• Field of Search: 257 98-100
• US Class Current: 257/98
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

Provided are a light emitting device, a light emitting device package and a lighting system including the same. The light emitting device (LED) comprises a light emitting structure comprising a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer and a first electrode over the light emitting structure. A portion of the light emitting structure is sloped at a predetermined angle.

Claims

1. A light emitting device (LED) comprising:

a first semiconductor layer,

an active layer adjacent to the first semiconductor layer,

a second semiconductor layer adjacent to the active layer, the first semiconductor layer being a first conductivity type and the second semiconductor layer being a second conductivity type; and

a third semiconductor layer adjacent to the first semiconductor layer such that the first semiconductor layer is between the third semiconductor layer and the active layer, wherein the third semiconductor layer having at least one side surface that is inclined, wherein the third semiconductor layer being the first conductive type,

wherein the third semiconductor layer of the first conductive type is a GaN type semiconductor layer and the first semiconductor layer of the first conductive type is a GaN type semiconductor layer, and

wherein the third semiconductor layer of the first conductive type physically contacts the first semiconductor layer of the first conductive type.

2. The LED of claim 1, wherein the at least one side surface of the third semiconductor layer comprises a non-uniform side surface.

3. The LED of claim 1, wherein the third semiconductor layer is a doped semiconductor layer.

4. The LED of claim 1, wherein the third semiconductor layer comprises an undoped-GaN layer.

5. The LED of claim 1, wherein the third semiconductor layer has a width greater than the first semiconductor layer.

6. The LED of claim 1, wherein the first semiconductor layer of the has a crystalline direction that is different from a crystalline direction of the second semiconductor layer.

7. The LED of claim 1, wherein the third semiconductor layer is directly disposed on the first semiconductor layer.

8. The LED of claim 1, wherein the third semiconductor layer comprises a protrusion extend outside thereof.

9. The LED of claim 1, further comprising a second electrode adjacent to the second semiconductor layer.

10. The LED of claim 9, wherein the second electrode comprises at least one of an ohmic layer, a reflective layer, and a coupling layer.

11. The LED of claim 10, wherein the second electrode is formed of at least one of ITO, IZO(In—

ZnO), GZO(Ga—

ZnO), AZO(Al—

ZnO), AGZO(Al—

Ga ZnO), IGZO(In—

Ga ZnO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

12. A light emitting device (LED) package that includes the LED of claim 1, and that includes a package body to house the LED.

13. A lighting system that includes a light emitting module having the light emitting device (LED) package of claim 12.

14. The LED of claim 1, wherein a recess is founed in the third semiconductor layer.

15. The LED of claim 14, wherein the recess extends into the first semiconductor layer, and a first electrode is provided only in the recess.

16. The LED of claim 14, wherein the recess extends into the first semiconductor layer and a first electrode is directly provided in the recess of the first semiconductor layer.

17. A light emitting device (LED) comprising:

a first semiconductor layer;

an active layer under the first semiconductor layer;

a second semiconductor layer under the active layer such that the active layer is between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being a first conductivity type and the second semiconductor layer being a second conductivity type; and

a third semiconductor layer on the first semiconductor layer such that the first semiconductor layer is between the active layer and the third semiconductor layer, wherein the third semiconductor layer has at least one inclined side surface, and a recess is provided in the third semiconductor layer, wherein the third semiconductor layer being the first conductive type,

wherein the third semiconductor layer is a GaN type semiconductor layer, and the first semiconductor layer is a GaN type semiconductor layer,

wherein the third semiconductor layer of the first conductive type is directly disposed on the first semiconductor layer of the first conductive type.

18. The LED of claim 17, wherein the at least one inclined side surface of the third semiconductor layer includes a non-uniform side surface.

19. The LED of claim 17, wherein the recess extends into the first semiconductor layer, and a first electrode is provided in the recess.