Semiconductor light emitting device
DCFirst Claim
Patent Images
1. A semiconductor light emitting device comprising:
- a C plane (0001) sapphire substrate comprising a plurality of protrusions that are disposed on a primary surface of the sapphire substrate in a two-dimensionally repeated pattern;
a plurality of GaN-based semiconductor layers epitaxially grown on the sapphire substrate; and
an ohmic electrode formed on the GaN-based semiconductor layers,wherein the semiconductor light emitting device is configured so that light generated in the GaN-based semiconductor layers is emitted from the ohmic electrode or the sapphire substrate,the protrusions are configured to scatter or diffract light generated in the semiconductor layers and have a shape of a triangle having sides that are not parallel to A-axis of the GaN-based semiconductor layers in plan view of the sapphire substrate, andin a sectional view of the sapphire substrate side surfaces of the protrusions incline, and an inclination angle of the side surfaces from the primary surface of the sapphire substrate is more than 105 degrees and not more than 150 degrees.
0 Assignments
Litigations
0 Petitions
Accused Products
Abstract
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
83 Citations
19 Claims
-
1. A semiconductor light emitting device comprising:
-
a C plane (0001) sapphire substrate comprising a plurality of protrusions that are disposed on a primary surface of the sapphire substrate in a two-dimensionally repeated pattern; a plurality of GaN-based semiconductor layers epitaxially grown on the sapphire substrate; and an ohmic electrode formed on the GaN-based semiconductor layers, wherein the semiconductor light emitting device is configured so that light generated in the GaN-based semiconductor layers is emitted from the ohmic electrode or the sapphire substrate, the protrusions are configured to scatter or diffract light generated in the semiconductor layers and have a shape of a triangle having sides that are not parallel to A-axis of the GaN-based semiconductor layers in plan view of the sapphire substrate, and in a sectional view of the sapphire substrate side surfaces of the protrusions incline, and an inclination angle of the side surfaces from the primary surface of the sapphire substrate is more than 105 degrees and not more than 150 degrees. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
Specification