Optoelectronic device and method for manufacturing the same

• US 8,344,409 B2
• Filed: 07/07/2011
• Issued: 01/01/2013
• Est. Priority Date: 10/29/2010
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Peng, Wei-Chih, Hsu, Ta-Cheng, Shen, Yu-Jiun, Tsai, Ching-Fu
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US13/178,323
• Publication Number:
  US 20120104440A1
• Time in Patent Office: 544 Days
• Field of Search: 257/288, 257/292, 257/98, 257/E25.032
• US Class Current: 257/98
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/0547 comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H10K 50/854 comprising scattering means
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 50/858 comprising refractive means, e.g. lenses
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

Claims

1. An optoelectronic device comprising:

a substrate; and

a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

2. The optoelectronic device of claim 1, wherein the first transition layer is an n-type doped layer with the doping concentration of 1E15-1E19 cm⁻

3 and/or the second transition layer is an unintentional doped layer or an undoped layer.

3. The optoelectronic device of claim 1, wherein the width of the hollow component can be 10 nm-2000 nm.

4. The optoelectronic device of claim 1, wherein more than one of the hollow component are formed inside the first transition stack and at least two hollow components form a mesh structure, a porous structure, or a regular array wherein the average distance of the hollow component can be 10 nm-2000 nm and the porosity of the hollow component can be 5-90%.

5. The optoelectronic device of claim 1, further comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer formed on the first transition stack wherein the material of the first conductivity semiconductor layer, the active layer and the second conductivity semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

6. The optoelectronic device of claim 1, wherein the width of the hollow component closer to the substrate is larger than the width of the hollow component closer to the second transition layer.

7. The optoelectronic device of claim 1, wherein the transition stack comprising a plurality of the first transition layer and each of the first transition layer having more than one of the hollow component with different width, and the width of the hollow component closer to the second transition layer is smaller than the width of the hollow component closer to the substrate.

8. The optoelectronic device of claim 1, wherein the material of the reflector rod can be non-crystalline material such as ITO, ZnO, nitrides or oxides of Si, Ti, Ta, Zr and the like, or composite material of nitrides or oxides of Si, Ti, Ta, Zr and the like.

9. The optoelectronic device of claim 1, wherein the height of the reflector rod can be 30-300 nm;

the width of the reflector rod can be 0.1-10 μ

m, and the cover ratio of the reflector rod on the first transition layer can be 20%-60%.

10. The optoelectronic device of claim 1, further comprising a plurality of the reflector rods formed irregularly on the first transition layer and inside the second transition layer.

11. A method of fabricating an optoelectronic device comprising:

providing a substrate; and

forming a first transition stack on the substrate wherein the first transition stack comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

12. The method of fabricating an optoelectronic device of claim 11, wherein the hollow component formed inside the first transition layer is formed by wet etching, electrochemical etching or dry etching.

13. The method of fabricating an optoelectronic device of claim 11, wherein the first transition layer is an n-type doped layer with the doping concentration of 1E15-1E19 cm⁻

3 and/or the second transition layer is an unintentional doped layer or an undoped layer.

14. The method of fabricating an optoelectronic device of claim 11, wherein the width of the hollow component can be 10 nm-2000 nm.

15. The method of fabricating an optoelectronic device of claim 11, wherein more than one of the hollow component are formed inside the first transition stack and at least two hollow components form a mesh structure, a porous structure, or a regular array wherein the average distance of the hollow component can be 10 nm-2000 nm and the porosity of the hollow component can be 5-90%.

16. The method of fabricating an optoelectronic device of claim 11, further comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer formed on the first transition stack wherein the material of the first conductivity semiconductor layer, the active layer and the second conductivity semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

17. The method of fabricating an optoelectronic device of claim 11, wherein the transition stack comprising a plurality of the first transition layer and each of the first transition layer having more than one of the hollow component with different width, and the width of the hollow component closer to the second transition layer is smaller than the width of the hollow component closer to the substrate.

18. The method of fabricating an optoelectronic device of claim 11, wherein the material of the reflector rod can be non-crystalline material such as ITO, ZnO, nitrides or oxides of Si, Ti, Ta, Zr and the like or composite material of nitrides or oxides of Si, Ti, Ta, Zr and the like.

19. The method of fabricating an optoelectronic device of claim 11, wherein the height of the reflector rod can be 30-300 nm, the width of the reflector rod can be 0.1-10 μ

m and the cover ratio of the reflector rod on the first transition layer can be 20%-60%.

20. The method of fabricating an optoelectronic device of claim 11, further comprising forming a plurality of the reflector rod irregularly on the first transition layer and inside the second transition layer.