Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor layer of a first conductivity type having a first surface and a second surface;
a source region disposed on the first surface;
a gate region disposed on the first surface adjacent the source region;
a drain region disposed on the first surface; and
a charge control trench disposed between the gate region and the drain region, wherein the charge control trench comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced spatially fixed charge having a polarity which tends to deplete portions of said semiconductor layer;
wherein the intentionally introduced charge comprises a net positive charge from associated cesium ions.
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Accused Products
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type having a first surface and a second surface, a source region disposed on the first surface, a gate region disposed on the first surface adjacent the source region, and a drain region disposed on the first surface. The semiconductor device also includes a pair of charge control trenches disposed between the gate region and the drain region. Each of the pair of charge control trenches is characterized by a width and includes a first dielectric material disposed therein and a second material disposed internal to the first dielectric material. Additionally, a concentration of doping impurities present in the semiconductor layer of the first conductivity type and a distance between the pair of charge control trenches define an electrical characteristic of the semiconductor device that is independent of the width of each of the pair of charge control trenches.
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Citations
9 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type having a first surface and a second surface; a source region disposed on the first surface; a gate region disposed on the first surface adjacent the source region; a drain region disposed on the first surface; and a charge control trench disposed between the gate region and the drain region, wherein the charge control trench comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced spatially fixed charge having a polarity which tends to deplete portions of said semiconductor layer; wherein the intentionally introduced charge comprises a net positive charge from associated cesium ions.
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2. A semiconductor device comprising:
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a first-conductivity-type source region disposed on a first surface of a semiconductor layer; a gate region capacitively coupled to a second-conductivity-type body region of the semiconductor layer, which lies adjacent to the source region; a drain region disposed on the first surface, and separated from the source region by said body region and by a first-conductivity-type drift region; and a charge control trench which is disposed between the gate region and the drain region, and which abuts the drift region, and which comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced spatially fixed charge having a polarity which tends to deplete portions of said drift region; wherein the first conductivity type is n-type, the second conductivity type is p-type, and the spatially fixed charge has positive polarity.
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3. A semiconductor device comprising:
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a first-conductivity-type source region disposed on a first surface of a semiconductor layer; a gate region capacitively coupled to a second-conductivity-type body region of the semiconductor layer, which lies adjacent to the source region; a drain region disposed on the first surface, and separated from the source region by said body region and by a first-conductivity-type drift region; and a charge control trench which is disposed between the gate region and the drain region, and which abuts the drift region, and which comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced spatially fixed charge having a polarity which tends to deplete portions of said drift region; wherein the intentionally introduced charge is a net positive charge associated with a region of cesium ions.
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4. A semiconductor device comprising:
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a first-conductivity-type source region disposed on a first surface of a semiconductor layer; a gate region capacitively coupled to a second-conductivity-type body region of the semiconductor layer, which lies adjacent to the source region; a drain region disposed on the first surface, and separated from the source region by said body region and by a first-conductivity-type drift region; and a charge control trench which is disposed between the gate region and the drain region, and which abuts the drift region, and which comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced spatially fixed charge having a polarity which tends to deplete portions of said drift region; wherein the dielectric material is silicon oxide, and the intentionally introduced charge is a net positive charge associated with a region of cesium ions.
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5. A semiconductor device comprising:
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an n-type source region disposed on a first surface of a semiconductor layer; a gate region capacitively coupled to a p-type body region of the semiconductor layer, which lies adjacent to the source region; an n-type drain contact region disposed on the first surface, and separated from the source region by said body region and by an n-type drift region; and a charge control trench which is disposed between the gate region and the drain contact region, and which abuts the drift region, and which comprises a first dielectric material disposed therein, the first dielectric material including net intentionally introduced spatially fixed charge having a positive net polarity. - View Dependent Claims (6, 7, 8, 9)
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Specification