3-D circuits with integrated passive devices
First Claim
1. A 3-D integrated circuit (IC), comprising:
- an active device (AD) substrate having an AD region thereon with device contacts therein;
an isolator substrate, separately formed from the AD substrate and having one or more through-substrate-vias (TSVs) therein adapted to be coupled to one or more of the device contacts in the AD region of the AD substrate;
an integrated passive device (IPD) substrate, separately formed from the AD substrate and the isolator substrate and having an IPD zone on its surface in which IPDs have been formed, and having a plurality of TSVs formed underlying the IPD zone through the IPD substrate, wherein the TSVs in the IPD substrate are coupled with the IPDs in the IPD zone, and at least some of the TSVs are adapted to couple one or more of the IPDs in the IPD zone to TSVs in the isolator substrate, and wherein at least some of the TSVs in the isolator substrate are vertically aligned with at least some of the TSVs in the IPD substrate; and
a further interconnect zone located between the isolator substrate and the IPD substrate, wherein the further interconnect zone includes a lateral conductor between two or more TSVs in a same substrate, thereby providing a connection selected from a group consisting of a cross-under connection between two or more IPDs in the IPD zone, and a cross-over connection between two or more device contacts of the AD substrate;
wherein at least one of the IPDs has a first element located in the IPD zone and a second element located in the further interconnect zone.
31 Assignments
0 Petitions
Accused Products
Abstract
3-D ICs (18, 18′, 90) with integrated passive devices (IPDs) (38) having reduced cross-talk and high packing density are provided by stacking separately prefabricated substrates (20, 30, 34) coupled by through-substrate-vias (TSVs) (40). An active device (AD) substrate (20) has contacts on its upper portion (26). An isolator substrate (30) is bonded to the AD substrate (20) so that TSVs (4030) in the isolator substrate (30) are coupled to the contacts (26) on the AD substrate (20), and desirably has an interconnect zone (44) on its upper surface. An IPD substrate (34) is bonded to the isolator substrate (30) so that TSVs (4034) therein are coupled to the interconnect zone (44) on the isolator substrate (30) and/or TSVs (4030) therein. The IPDs (38) are formed on its upper surface and coupled by TSVs (4034, 4030) in the IPD (34) and isolator (30) substrates to devices (26) in the AD substrate (20). The isolator substrate (30) provides superior IPD (38) to AD (26) cross-talk attenuation while permitting each substrate (20, 30, 34) to have small high aspect ratio TSVs (40), facilitating high circuit packing density and efficient manufacturing.
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Citations
15 Claims
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1. A 3-D integrated circuit (IC), comprising:
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an active device (AD) substrate having an AD region thereon with device contacts therein; an isolator substrate, separately formed from the AD substrate and having one or more through-substrate-vias (TSVs) therein adapted to be coupled to one or more of the device contacts in the AD region of the AD substrate; an integrated passive device (IPD) substrate, separately formed from the AD substrate and the isolator substrate and having an IPD zone on its surface in which IPDs have been formed, and having a plurality of TSVs formed underlying the IPD zone through the IPD substrate, wherein the TSVs in the IPD substrate are coupled with the IPDs in the IPD zone, and at least some of the TSVs are adapted to couple one or more of the IPDs in the IPD zone to TSVs in the isolator substrate, and wherein at least some of the TSVs in the isolator substrate are vertically aligned with at least some of the TSVs in the IPD substrate; and a further interconnect zone located between the isolator substrate and the IPD substrate, wherein the further interconnect zone includes a lateral conductor between two or more TSVs in a same substrate, thereby providing a connection selected from a group consisting of a cross-under connection between two or more IPDs in the IPD zone, and a cross-over connection between two or more device contacts of the AD substrate; wherein at least one of the IPDs has a first element located in the IPD zone and a second element located in the further interconnect zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A 3-D integrated circuit (IC), comprising:
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an active device (AD) substrate having an AD region thereon with device contacts therein; an isolator substrate, separately formed from the AD substrate and having one or more through-substrate-vias (TSVs) therein adapted to be coupled to one or more of the device contacts in the AD region of the AD substrate; an integrated passive device (IPD) substrate, separately formed from the AD substrate and the isolator substrate and having an IPD zone on its surface in which IPDs have been formed, and having a plurality of TSVs formed underlying the IPD zone through the IPD substrate, wherein the TSVs in the IPD substrate are coupled with the IPDs in the IPD zone, and at least some of the TSVs are adapted to couple one or more of the IPDs in the IPD zone to TSVs in the isolator substrate; and a further interconnect zone located between the isolator substrate and the IPD substrate, wherein the further interconnect zone includes a lateral conductor between two or more TSVs in the IPD substrate, thereby providing a cross-under connection between two or more IPDs in the IPD zone; further comprising a circuit element, wherein a first portion of the circuit element is formed in the IPD zone, and a second portion of the circuit element is formed in the further interconnect zone. - View Dependent Claims (13, 14, 15)
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Specification