Barrier for through-silicon via
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate having an opening;
a liner formed along sidewalls of the opening, the liner comprising a dielectric material;
a barrier layer overlying the liner along the sidewalls of the opening, the barrier layer comprising fluorine, wherein the content of fluorine is no more than about 15% of the barrier layer;
a seed layer overlying the barrier layer along the sidewalls of the opening; and
a conductive material formed on the seed layer and filling the opening, the conductive material being part of a through substrate via.
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Abstract
A system and a method for protecting through-silicon vias (TSVs) is disclosed. An embodiment comprises forming an opening in a substrate. A liner is formed in the opening and a barrier layer comprising carbon or fluorine is formed along the sidewalls and bottom of the opening. A seed layer is formed over the barrier layer, and the TSV opening is filled with a conductive filler. Another embodiment includes a barrier layer formed using atomic layer deposition.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having an opening; a liner formed along sidewalls of the opening, the liner comprising a dielectric material; a barrier layer overlying the liner along the sidewalls of the opening, the barrier layer comprising fluorine, wherein the content of fluorine is no more than about 15% of the barrier layer; a seed layer overlying the barrier layer along the sidewalls of the opening; and a conductive material formed on the seed layer and filling the opening, the conductive material being part of a through substrate via. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device comprising:
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providing a substrate with an opening located therein; forming a dielectric liner along sidewalls of the opening; forming a barrier layer over the liner and along the sidewalls and a bottom of the opening using an atomic layer deposition process and introducing an alloying material into the barrier layer, the alloying material comprises fluorine, with a content of not more than about 15% of the alloying material; forming a seed layer overlying the barrier layer; forming a conductive material on the seed layer, filling the opening; and removing a portion of the substrate to expose the conductive material. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification