Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods

• US 8,345,474 B2
• Filed: 04/28/2010
• Issued: 01/01/2013
• Est. Priority Date: 04/29/2009
• Status: Active Grant

• Current Assignee: Korea University Research and Business Foundation (Korea University), Samsung Electronics Co. Ltd.
• Original Assignee: Korea University Research and Business Foundation (Korea University), Samsung Electronics Co. Ltd.
• Inventors: Oh, Sechung, Lee, Kyung Jin, Lee, Jangeun, Suh, Hong Ju
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): Byrne, Harry W
• Application Number:
  US12/769,287
• Publication Number:
  US 20100277976A1
• Time in Patent Office: 979 Days
• Field of Search: 365/48, 365/55, 365/62, 365/66, 365/74, 365/78, 365 80- 93, 365/100, 365/130, 365/131, 365/148, 365/158, 365171-173, 365/209, 365/213, 365/225.5, 365/230.07, 365/232, 365/243.5, 216/22, 257/295, 257/421, 257/E21.665, 438/3, 428810-816, 428817-8251, 428/826, 977933-935
• US Class Current: 365/171
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

Abstract

A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.

Claims

1. A magnetic memory device comprising:

a tunnel barrier;

a reference layer on a first side of the tunnel barrier; and

a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers,

wherein the free layer comprises a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer so that the nonmagnetic layer is between the first and second magnetic layers and so that the first magnetic layer is between the tunnel barrier and the second magnetic layer, and

wherein a product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer is less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer.

2. The magnetic memory device of claim 1, wherein the product of the saturated magnetization of the first magnetic layer and the thickness of the first magnetic layer is less than half the product of the saturated magnetization of the second magnetic layer and the thickness of the second magnetic layer.

3. The magnetic memory device of claim 1, wherein the product of the saturated magnetization of the first magnetic layer and the thickness of the first magnetic layer is greater than one-sixth the product of the saturated magnetization of the second magnetic layer and the thickness of the second magnetic layer.

4. The magnetic memory device of claim 1, wherein the saturated magnetization of the first magnetic layer is less than the saturated magnetization of the second magnetic layer.

5. The magnetic memory device of claim 4, wherein the first magnetic layer comprises a ferromagnetic material doped with a light metal.

6. The magnetic memory device of claim 4, wherein the thickness of the first magnetic layer is less than the thickness of the second magnetic layer.

7. The magnetic memory device of claim 1, wherein the reference layer comprises a first reference magnetic layer, a second reference magnetic layer adjacent the tunnel barrier, and a reference nonmagnetic layer interposed between the first and second reference magnetic layers.

8. The magnetic memory device of claim 7, further comprising:

a pinning layer adjacent the first reference magnetic layer, so that the first reference magnetic layer is between the reference nonmagnetic layer and the pinning layer.

9. The magnetic memory device of claim 1, further comprising:

a first electrode adjacent the reference layer; and

a second electrode adjacent to the free layer, wherein the reference, free, and tunnel barrier layers are between the first and second electrodes.

10. The magnetic memory device of claim 9, further comprising:

a substrate wherein the substrate is on the first electrode so that the first electrode is between the substrate and the reference layer or wherein the substrate is on the second electrode so that the second electrode is between the substrate and the free layer.

11. The magnetic memory device of claim 9, wherein a writing operation is performed by applying a current between the first and second electrodes in a direction perpendicular to the first and second electrodes.

12. A method of storing data using a magnetic memory device structure, the method comprising:

providing a magnetic tunnel junction (MTJ) structure including a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers, wherein the free layer comprises a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer so that the nonmagnetic layer is between the first and second magnetic layers and so that the first magnetic layer is between the tunnel barrier and the second magnetic layer, and wherein a product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer is less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer; and

applying an electrical current through the reference layer, the tunnel barrier, and the free layer to perform a write operation for the MTJ structure.

13. The method of claim 12 wherein applying the electrical current comprises applying a first electrical current in a first direction from the reference layer to the free layer to program the MTJ structure to a first data value, and applying a second electrical current in a second direction from the free layer to the reference layer to program the MTJ structure to a second data value different from the first data value.

14. The method of claim 12, wherein the product of the saturated magnetization of the first magnetic layer and the thickness of the first magnetic layer is less than half the product of the saturated magnetization of the second magnetic layer and the thickness of the second magnetic layer.

15. The method of claim 12, wherein the product of the saturated magnetization of the first magnetic layer and the thickness of the first magnetic layer is greater than one-sixth the product of the saturated magnetization of the second magnetic layer and the thickness of the second magnetic layer.

16. The method of claim 12, wherein the saturated magnetization of the first magnetic layer is less than the saturated magnetization of the second magnetic layer.

17. The method of claim 16, wherein the first magnetic layer comprises a ferromagnetic material doped with a light metal.

18. The method of claim 16, wherein the thickness of the first magnetic layer is less than the thickness of the second magnetic layer.

19. The method of claim 12, wherein the reference layer comprises a first reference magnetic layer, a second reference magnetic layer adjacent the tunnel barrier, and a reference nonmagnetic layer interposed between the first and second reference magnetic layers.

20. The method of claim 19, wherein the MTJ structure further includes a pinning layer adjacent the first reference magnetic layer, so that the first reference magnetic layer is between the reference nonmagnetic layer and the pinning layer.