Diaphragm of MEMS electroacoustic transducer

• US 8,345,895 B2
• Filed: 07/25/2008
• Issued: 01/01/2013
• Est. Priority Date: 07/25/2008
• Status: Active Grant

• Current Assignee: Marlin Semiconductor Limited (f/k/a Sandyford Semiconductor Limited) (Vector Capital Corporation)
• Original Assignee: United Microelectronics Corporation
• Inventors: Chen, Li-Che
• Primary Examiner(s): Tran, Minh-Loan T
• Assistant Examiner(s): Erdem, Fazli
• Application Number:
  US12/179,871
• Publication Number:
  US 20100020991A1
• Time in Patent Office: 1,621 Days
• Field of Search: 381/161, 381/162, 381/174, 381/175, 381/150, 257/416, 257/419, 257/E21.002, 257/E21.211, 257/E29.324
• US Class Current: 381/162
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 3/0078 Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 19/04 Microphones H04R19/01 takes precedence
• CPC Class Codes: H04R 7/06 comprising a plurality of sections or layers

Abstract

A diaphragm of an MEMS electroacoustic transducer including a first axis-symmetrical pattern layer is provided. Because the layout of the first axis-symmetrical pattern layer can match the pattern of the sound wave, the vibration uniformity of the diaphragm can be improved.

Claims

1. A diaphragm of an MEMS electroacoustic transducer, comprising a plurality of serrated line patterns, wherein all of the serrated line patterns are positioned in parallel with each other, adjacent serrated line patterns are spaced apart and without other line patterns disposed therebetween.

2. A diaphragm of an MEMS electroacoustic transducer, comprising a first axis-symmetrical pattern layer and at least one second axis-symmetrical pattern layer positioned on top of the first axis-symmetrical pattern layer, wherein material of the first axis-symmetrical pattern layer is the same as material of the at least one second axis-symmetrical pattern layer, each of the first axis-symmetrical pattern layer and the second axis-symmetrical pattern layer has a plurality of gaps and a plurality of patterns, the patterns of the second axis-symmetrical pattern layer cover all of the gaps in the first axis-symmetrical pattern layer, and all of the gaps in the second axis-symmetrical pattern layer are disposed above the patterns of the first axis-symmetrical pattern layer.