Transforming metrology data from a semiconductor treatment system using multivariate analysis

• US 8,346,506 B2
• Filed: 04/11/2012
• Issued: 01/01/2013
• Est. Priority Date: 02/07/2006
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Vuong, Vi, Bao, Junwei, Chen, Yan, Weichert, Heiko, Egret, Sebastien
• Primary Examiner(s): BHAT, ADITYA S
• Application Number:
  US13/444,746
• Publication Number:
  US 20120199287A1
• Time in Patent Office: 265 Days
• Field of Search: 702/181
• US Class Current: 702/181
• CPC Class Codes: G01N 2021/215 Brewster incidence arrangement
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/4788 Diffraction for sizing particles G01N15/0205

Abstract

Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.

Claims

1. A treatment system for etching a feature into a substrate, comprising:

an etching system configured to etch a pattern in one or more substrates using a lithographic structure prepared in a film of light-sensitive material to radiation;

a metrology system to measure a set of metrology data for said one or more substrates treated in said etching system for variations in process data for said etching system, wherein said process data comprises a gas pressure in said etching system, a flow rate of a process gas into said etching system, a power coupled to said process gas in said etching system, a time for performing an etching process in said etching system, a temperature of said one or more substrates, or a temperature of a substrate holder for supporting said one or more substrates, or any combination of two or more thereof;

a data processing system configured to;

obtain said set of metrology data;

determine one or more essential variables for said obtained set of metrology data using multivariate analysis;

obtain new metrology data measured using said metrology system; and

transform said new metrology data into refined metrology data using said one or more essential variables,

wherein said metrology data comprises optical metrology data, and

wherein said optical metrology data comprises an optical signal resulting from illuminating one or more structures on said one or more substrates with an incident optical signal.

2. The treatment system of claim 1, wherein said data processing system is further configured to:

correlate at least one of said one or more essential variables with a critical dimension of said pattern; and

select said at least one of said one or more essential variables that correlates with said critical dimension to transform said new metrology data.

3. The treatment system of claim 1, wherein said multivariate analysis comprises principal components analysis (PCA).

4. The treatment system of claim 1, further comprising:

a controller coupled to said etching system, and configured to control said etching system using refined metrology data.