Dithiane derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition

• US 8,349,536 B2
• Filed: 11/29/2010
• Issued: 01/08/2013
• Est. Priority Date: 05/29/2008
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Nozaki, Koji
• Primary Examiner(s): Kelly, Cynthia
• Assistant Examiner(s): Cepluch, Alyssa L
• Application Number:
  US12/955,462
• Publication Number:
  US 20110076620A1
• Time in Patent Office: 771 Days
• Field of Search: 526/256, 526/318, 526/286, 526/329.7, 526/245, 549/20
• US Class Current: 430/270.1
• CPC Class Codes: C07D 339/08 Six-membered rings
• CPC Class Codes: C08F 220/1811 C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
• CPC Class Codes: G03F 7/0397 the macromolecular compound having an alicyclic moiety in a side chain
• CPC Class Codes: G03F 7/2041 in the presence of a fluid, e.g. immersion; using fluid cooling means

Abstract

A dithiane derivative, having a structure expressed by the following general formula 1:

where R₁ is —H, or —CH₃, a polymer containing a monomer unit containing the dithiane derivative, a resist composition containing the polymer, and a method for manufacturing a semiconductor device using the resist composition.

Claims

1. A polymer, comprising:

a monomer unit containing a dithiane derivative, and

a monomer unit containing an alicyclic group which is reactive to an acid,

wherein the dithiane derivative has a structure expressed by the following general formula 1;

2. The polymer according to claim 1, further comprising a monomer unit containing a lactone group.

3. The polymer according to claim 1, wherein the alicyclic group is a 2-alkyladamanthyl group.

4. A resist composition, comprising:

a polymer comprising a monomer unit containing a dithiane derivative and a monomer unit containing an alicyclic group which is reactive to an acid,

wherein the dithiane derivative has a structure expressed by the following general formula 1;

5. The resist composition according to claim 4, wherein the resist composition has a refractive index of 1.530 or more with respect to light having a wavelength of 400 nm to 850 nm.

6. The resist composition according to claim 4, wherein the polymer is an acrylic resin.

7. The resist composition according to claim 4, further comprising an acid-generating agent.

8. The resist composition according to claim 4, further comprising a monomer of a dithiane derivative,

wherein the dithiane derivative has a structure expressed by the following general formula 1:

9. The resist composition according to claim 4, wherein the polymer is a copolymer containing the monomer unit containing the dithiane derivative and one or more other monomer units, and

wherein the resist composition further comprises a homopolymer of a dithiane derivative,

wherein the dithiane derivative has a structure expressed by the following general formula 1:

10. A method for manufacturing a semiconductor device, comprising:

forming a resist film on a processing surface using a resist composition;

selectively exposing the resist film to light; and

developing the resist film so as to pattern the resist film,

wherein the resist composition contains a polymer, and

wherein the polymer contains a monomer unit containing a dithiane derivative, in which the dithiane derivative has the structure expressed by the general formula 1;

11. The method according to claim 10, wherein the selectively exposing is selectively exposing the resist film to light in accordance with liquid immersion lithography, and a medium used for the liquid immersion lithography is either water or a liquid having higher refractive index than that of water with respect to light having a wavelength of 193 nm.

12. The method according to claim 10, further comprising etching the processing surface using the patterned resist film as a mask so as to pattern the processing surface.

13. The method according to claim 12, wherein the processing surface is a surface of a base, the base being formed of an insulating material having a dielectric constant of 2.7 or less.