Thin film transistors and methods of manufacturing the same
First Claim
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1. A method of manufacturing a thin-film-transistor (TFT), the method comprising:
- forming a zinc oxide (ZnO)-based channel layer on a substrate, the ZnO-based channel layer including a plurality of ZnO-based semiconductor layers, a Zn concentration of an uppermost semiconductor layer of the plurality of ZnO-based semiconductor layers less than a Zn concentration of at least one other of the plurality of semiconductor layers;
forming a source electrode and a drain electrode at respective sides of the channel layer; and
forming a passive layer covering the channel layer, the source electrode, and the drain electrode.
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Abstract
A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.
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Citations
12 Claims
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1. A method of manufacturing a thin-film-transistor (TFT), the method comprising:
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forming a zinc oxide (ZnO)-based channel layer on a substrate, the ZnO-based channel layer including a plurality of ZnO-based semiconductor layers, a Zn concentration of an uppermost semiconductor layer of the plurality of ZnO-based semiconductor layers less than a Zn concentration of at least one other of the plurality of semiconductor layers; forming a source electrode and a drain electrode at respective sides of the channel layer; and forming a passive layer covering the channel layer, the source electrode, and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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