Selective floating body SRAM cell
First Claim
1. A method of making a memory cell comprising:
- doping a first region of a semiconductor substrate with one of an n-type or a p-type dopant and doping a second region of the semiconductor substrate with the other of an n-type or a p-type dopant;
forming over the first region a pair of access transistors that are floating body devices and at least one pair of pull-down transistors that are non-floating body devices;
forming over the second region at least one pair of pull-up transistors; and
coupling the pair of pull-down transistors and the pair of pull-up transistors between the pair of access transistors to form a memory cell,wherein forming over the first region the pair of access transistors that are floating body devices comprises forming the body of each of the access transistors from a layer of partially depleted silicon-on-insulator, and wherein forming over the first region the at least one pair of pull-down transistors that are non-floating body devices comprises forming for each of the pull-down transistors a finFET channel comprising parallel fins spaced from one another and each fin controlled by at least one common gate.
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Accused Products
Abstract
A memory cell has N≧6 transistors, in which two are access transistors, at least one pair [say (N−2)/2] are pull-up transistors, and at least another pair [say (N−2)/2] are pull-down transistors. The pull-up and pull-down transistors are all coupled between the two access transistors. Each of the access transistors and the pull-up transistors are the same type, p-type or n-type. Each of the pull-down transistors is the other type, p-type or n-type. The access transistors are floating body devices. The pull-down transistors are non-floating body devices. The pull-up transistors may be floating or non-floating body devices. Various specific implementations and methods of making the memory cell are also detailed.
31 Citations
11 Claims
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1. A method of making a memory cell comprising:
- doping a first region of a semiconductor substrate with one of an n-type or a p-type dopant and doping a second region of the semiconductor substrate with the other of an n-type or a p-type dopant;
forming over the first region a pair of access transistors that are floating body devices and at least one pair of pull-down transistors that are non-floating body devices; forming over the second region at least one pair of pull-up transistors; and coupling the pair of pull-down transistors and the pair of pull-up transistors between the pair of access transistors to form a memory cell, wherein forming over the first region the pair of access transistors that are floating body devices comprises forming the body of each of the access transistors from a layer of partially depleted silicon-on-insulator, and wherein forming over the first region the at least one pair of pull-down transistors that are non-floating body devices comprises forming for each of the pull-down transistors a finFET channel comprising parallel fins spaced from one another and each fin controlled by at least one common gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
- doping a first region of a semiconductor substrate with one of an n-type or a p-type dopant and doping a second region of the semiconductor substrate with the other of an n-type or a p-type dopant;
Specification