Semiconductor light emitting device and method for manufacturing same
First Claim
1. A semiconductor light emitting device, comprising:
- a light emitting unit includinga semiconductor stacked body including a firstsemiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side and a second major surface on a second semiconductor layer side,a first electrode electrically connected to the first semiconductor layer on a second major surface side, anda second electrode electrically connected to the second semiconductor layer on the second major surface side;
a first conductive member electrically connected to the first electrode, the first conductive member including a first columnar portion provided on the second major surface to cover a portion of the second semiconductor layer on the second major surface side, the first columnar portion being separate from the second semiconductor layer;
an insulating layer provided between the first columnar portion and the portion of the second semiconductor layer on the second major surface side;
a second conductive member electrically connected to the second electrode, the second conductive member including a second columnar portion provided on the second major surface;
a sealing member covering a side surface of the first conductive member and a side surface of the second conductive member; and
an optical layer provided on the first major surface of the semiconductor stacked body, the optical layer including a wavelength conversion unit configured to absorb an emitted light emitted from the light emitting layer and emit light having a wavelength different from a wavelength of the emitted light;
wherein the first conductive member further includes a first connection portion covering at least a portion of the insulating layer to electrically connect the first electrode to the first columnar portion.
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Accused Products
Abstract
According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.
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Citations
18 Claims
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1. A semiconductor light emitting device, comprising:
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a light emitting unit including a semiconductor stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side and a second major surface on a second semiconductor layer side, a first electrode electrically connected to the first semiconductor layer on a second major surface side, and a second electrode electrically connected to the second semiconductor layer on the second major surface side; a first conductive member electrically connected to the first electrode, the first conductive member including a first columnar portion provided on the second major surface to cover a portion of the second semiconductor layer on the second major surface side, the first columnar portion being separate from the second semiconductor layer; an insulating layer provided between the first columnar portion and the portion of the second semiconductor layer on the second major surface side; a second conductive member electrically connected to the second electrode, the second conductive member including a second columnar portion provided on the second major surface; a sealing member covering a side surface of the first conductive member and a side surface of the second conductive member; and an optical layer provided on the first major surface of the semiconductor stacked body, the optical layer including a wavelength conversion unit configured to absorb an emitted light emitted from the light emitting layer and emit light having a wavelength different from a wavelength of the emitted light; wherein the first conductive member further includes a first connection portion covering at least a portion of the insulating layer to electrically connect the first electrode to the first columnar portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor light emitting device, the semiconductor light emitting device including a light emitting unit, a first conductive member, an insulating layer, a second conductive member, a sealing member, and an optical layer, the light emitting unit including a semiconductor stacked body, a first electrode, and a second electrode, the semiconductor stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side and a second major surface on a second semiconductor layer side, the first electrode being electrically connected to the first semiconductor layer on a second major surface side, the second electrode being electrically connected to the second semiconductor layer on the second major surface side, the first conductive member being electrically connected to the first electrode, the first conductive member including a first columnar portion provided on the second major surface to cover a portion of the second semiconductor layer on the second major surface side, the first columnar portion being separate from the second semiconductor layer, the insulating layer being provided between the first columnar portion and the portion of the second semiconductor layer on the second major surface side, the second conductive member being electrically connected to the second electrode and including a second columnar portion provided on the second major surface, the sealing member covering a side surface of the first conductive member and a side surface of the second conductive member, the optical layer being provided on the first major surface of the semiconductor stacked body and including a wavelength conversion unit configured to absorb an emitted light emitted from the light emitting layer and emit light having a wavelength different from a wavelength of the emitted light, the method comprising:
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forming the insulating layer to cover the portion of the second semiconductor layer on the second major surface side; and forming a conductive film on the insulating layer covering the portion of the second semiconductor layer on the second major surface side, the conductive film being used to form at least a portion of the first conductive member; wherein the forming the insulating layer and the forming of the conductive film are implemented collectively for a plurality of the semiconductor stacked bodies provided on a substrate.
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Specification