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Compensated gate MISFET and method for fabricating the same

DC
  • US 8,350,294 B2
  • Filed: 04/08/2010
  • Issued: 01/08/2013
  • Est. Priority Date: 04/08/2009
  • Status: Active Grant
First Claim
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1. A column III Nitride transistor comprising:

  • a substrate,a set of III-N transition layers above the substrate,a III-N buffer layer above the set of transition layers,a III-N barrier layer above the buffer layer,a compensated GaN layer above the barrier layer, anda gate contact above the compensated GaN layer.

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