Bulk acoustic resonator comprising non-piezoelectric layer and bridge
First Claim
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1. A bulk acoustic wave (BAW) resonator, comprising:
- a first electrode formed on a substrate;
a piezoelectric layer formed on the first electrode;
a second electrode formed on the first piezoelectric layer;
a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and
a bridge formed between the non-piezoelectric layer and the first or second electrode.
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Abstract
A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.
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Citations
11 Claims
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1. A bulk acoustic wave (BAW) resonator, comprising:
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a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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