Analog circuit and semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first transistor; and
a plurality of transistors connected in parallel to each other,wherein a drain and a gate of the first transistor are electrically connected to each other,wherein the gate of the first transistor is electrically connected to a gate of one of the plurality of transistors,wherein each of the first transistor and the plurality of transistors comprises an oxide semiconductor, andwherein an off-state current of each of the first transistor and the plurality of transistors is 10−
13 A or less.
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Abstract
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
130 Citations
20 Claims
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1. A semiconductor device comprising:
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a first transistor; and a plurality of transistors connected in parallel to each other, wherein a drain and a gate of the first transistor are electrically connected to each other, wherein the gate of the first transistor is electrically connected to a gate of one of the plurality of transistors, wherein each of the first transistor and the plurality of transistors comprises an oxide semiconductor, and wherein an off-state current of each of the first transistor and the plurality of transistors is 10−
13 A or less. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first transistor; and a plurality of transistors connected in parallel to each other, wherein a drain and a gate of the first transistor are electrically connected to each other, wherein the gate of the first transistor is electrically connected to a gate of one of the plurality of transistors, wherein each of the first transistor and the plurality of transistors comprises an oxide semiconductor, and wherein the oxide semiconductor has a hydrogen concentration of 5×
1019 atoms/cm3 or lower. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a first transistor; a second transistor; a capacitor; a light-emitting element; a first line; and a second line, wherein one of a source and a drain of the first transistor is electrically connected to the first line, wherein the other one of the source and the drain of the first transistor is electrically connected to a gate of the second transistor and one terminal of the capacitor, wherein the other one terminal of the capacitor is electrically connected to one of a source and a drain of the second transistor and the light-emitting element, wherein the other one of the source and the drain of the second transistor is electrically connected to the second line, wherein each of the first transistor and the second transistor comprises an oxide semiconductor, and wherein an off-state current of each of the first transistor and the second transistor is 10−
13 A or less. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification