Phase change memory device having multi-level and method of driving the same

• US 8,351,240 B2
• Filed: 12/18/2009
• Issued: 01/08/2013
• Est. Priority Date: 06/15/2009
• Status: Active Grant

• Current Assignee: SK Hynix Inc.
• Original Assignee: SK Hynix Inc.
• Inventors: Park, Hae Chan, Lee, Se Ho
• Primary Examiner(s): Nguyen, Viet Q
• Application Number:
  US12/641,523
• Publication Number:
  US 20100315866A1
• Time in Patent Office: 1,117 Days
• Field of Search: 365/148, 365/163, 365/51, 365/46, 365/63, 365/113
• US Class Current: 365/148
• CPC Class Codes: G11C 11/21 using electric elements
• CPC Class Codes: G11C 11/5678 using amorphous/crystalline phase transition storage elements
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0028 Word-line or row circuits
• CPC Class Codes: G11C 13/003 Cell access
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0042 Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
• CPC Class Codes: G11C 2013/0078 Write using current through the cell
• CPC Class Codes: G11C 2213/71 Three dimensional array
• CPC Class Codes: G11C 2213/72 Array wherein the access device being a diode
• CPC Class Codes: G11C 2213/74 Array wherein each memory cell has more than one access device
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors

Abstract

A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.

Claims

1. A phase change memory device comprising:

a variable resistor configured to change into set and reset states in response to an applied current; and

a shifting unit coupled to the variable resistor such that the shifting unit is configured to shift resistance distribution in the set and reset state of the variable resistor by a predetermined level,

wherein the shifting unit includes a plurality of switching elements which are connected in series.

2. The phase change memory device of claim 1, wherein the switching elements comprise diodes.

3. The phase change memory device of claim 1, wherein the switching elements comprise transistors.

4. The phase change memory device of claim 1, wherein the shifting unit includes a plurality of control signals for controlling the plurality of switching elements.

5. The phase change memory device of claim 4, further comprising a plurality of word lines each of which transmits the plurality of control signals,

wherein the plurality of word lines are provided in a memory cell for driving the plurality of the switching elements.

6. The phase change memory device of claim 5, further comprising a control block configured to select one of the word lines.

7. The phase change memory device of claim 6, wherein the control block includes:

a decoding unit configured to selectively supply enabled control signals and disabled control signals to the word lines; and

switches connected to the word lines and configured to transmit the control signals to the word lines.

8. The phase change memory device of claim 7, wherein each switch is a transistor.

9. The phase change memory device of claim 1, further comprising bit lines coupled to the variable resistor, wherein a current is supplied to the variable resistor through the bit lines.

10. The phase change memory device of claim 1, wherein the variable resistor includes a phase change material.