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Phase change memory device having multi-level and method of driving the same

  • US 8,351,240 B2
  • Filed: 12/18/2009
  • Issued: 01/08/2013
  • Est. Priority Date: 06/15/2009
  • Status: Active Grant
First Claim
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1. A phase change memory device comprising:

  • a variable resistor configured to change into set and reset states in response to an applied current; and

    a shifting unit coupled to the variable resistor such that the shifting unit is configured to shift resistance distribution in the set and reset state of the variable resistor by a predetermined level,wherein the shifting unit includes a plurality of switching elements which are connected in series.

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