Phase change memory device having multi-level and method of driving the same
First Claim
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1. A phase change memory device comprising:
- a variable resistor configured to change into set and reset states in response to an applied current; and
a shifting unit coupled to the variable resistor such that the shifting unit is configured to shift resistance distribution in the set and reset state of the variable resistor by a predetermined level,wherein the shifting unit includes a plurality of switching elements which are connected in series.
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Abstract
A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.
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Citations
10 Claims
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1. A phase change memory device comprising:
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a variable resistor configured to change into set and reset states in response to an applied current; and a shifting unit coupled to the variable resistor such that the shifting unit is configured to shift resistance distribution in the set and reset state of the variable resistor by a predetermined level, wherein the shifting unit includes a plurality of switching elements which are connected in series. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification