Semiconductor device and method for manufacturing the same

• US 8,353,459 B2
• Filed: 03/26/2008
• Issued: 01/15/2013
• Est. Priority Date: 04/06/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Mai, Thien T
• Application Number:
  US12/076,997
• Publication Number:
  US 20080245880A1
• Time in Patent Office: 1,756 Days
• Field of Search: 235/492, 235/441, 257/491, 257/66, 257/704, 257/679, 438/618, 336/220, 336/200, 340/572.8, 343/867
• US Class Current: 235/492
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07775 the antenna being on-chip
• CPC Class Codes: G06K 19/07784 the inductive antenna consisting of a plurality of coils stacked on top of one another
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5328 containing conductive organic materials or pastes, e.g. conductive adhesives, inks
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

It is an object of the present invention to suppress poor connection or increase in contact resistance even in the case where an antenna is formed over an integrated circuit portion. An integrated circuit portion having a first conductive film is formed over a substrate, an insulating film is formed over the integrated circuit portion, a second conductive film serving as an antenna is formed over the insulating film, an opening is formed in the insulating film and the second conductive film to expose the first conductive film, and a third conductive film is formed in the opening and over a top surface of the second conductive film by a plating process to electrically connect the first conductive film and the second conductive film.

Claims

1. A semiconductor device comprising:

an integrated circuit portion provided over a substrate;

an insulating film provided over the integrated circuit portion;

an antenna provided over the insulating film; and

a conductive film configured to electrically connect the integrated circuit portion and the antenna through a seed layer,

wherein the insulating film and the antenna have an opening, and

wherein the conductive film and the seed layer are provided in the opening and over a top surface of the antenna.

2. The semiconductor device according to claim 1, wherein the conductive film contains at least one of copper (Cu), nickel (Ni), gold (Au), platinum (Pt), silver (Ag), cobalt (Co), and tin (Sn).

3. The semiconductor device according to claim 1, wherein the conductive film is formed by a plating process.

4. The semiconductor device according to claim 1, wherein the semiconductor device is an RFID tag.

5. The semiconductor device according to claim 1, wherein the opening provided in each of the insulating film and the anntena is overlapped with a transistor in the integrated circuit portion.

19. The semiconductor device according to claim 1, wherein the seed layer contains at least one of copper (Cu), nickel (Ni), and chromium (Cr).

6. A semiconductor device comprising:

an integrated circuit portion provided over a substrate;

an antenna provided over the integrated circuit portion; and

a conductive film configured to electrically connect the integrated circuit portion and the antenna through a seed layer,

wherein the antenna is provided by stacking a plurality of conductive films with an insulating film interposed therebetween,

wherein the plurality of conductive films and the insulating film have an opening, and

wherein the conductive film and the seed layer are provided in the opening.

7. The semiconductor device according to claim 6, wherein the conductive film contains at least one of copper (Cu), nickel (Ni), gold (Au), platinum (Pt), silver (Ag), cobalt (Co), and tin (Sn).

8. The semiconductor device according to claim 6, wherein the conductive film is formed by a plating process.

9. The semiconductor device according to claim 6, wherein the semiconductor device is an RFID tag.

10. The semiconductor device according to claim 6, wherein the conductive film is electrically connected to each of the plurality of conductive films in the opening.

11. The semiconductor device according to claim 6, wherein the opening provided in each of the insulating film and the anntena is overlapped with a transistor in the integrated circuit portion.

20. The semiconductor device according to claim 6, wherein the seed layer contains at least one of copper (Cu), nickel (Ni), and chromium (Cr).

12. A method for manufacturing a semiconductor device comprising:

forming an integrated circuit portion including a first conductive film over a substrate;

forming an insulating film over the integrated circuit portion;

forming an antenna including a second conductive film over the insulating film;

forming an opening in the insulating film and the second conductive film to expose the first conductive film;

forming a seed layer in the opening and over a top surface of the second conductive film; and

forming a third conductive film over the seed layer by a plating process to electrically connect the first conductive film and the second conductive film.

13. The method for manufacturing a semiconductor device according to claim 12, wherein the third conductive film contains at least one of copper (Cu), nickel (Ni), gold (Au), platinum (Pt), silver (Ag), cobalt (Co), tin (Sn), and an alloy material and a compound material each including any of these elements.

14. The method for manufacturing a semiconductor device according to claim 12, wherein the semiconductor device is an RFID tag.

21. The method for manufacturing a semiconductor device according to claim 12, wherein the seed layer contains at least one of copper (Cu), nickel (Ni), and chromium (Cr).

15. A method for manufacturing a semiconductor device comprising:

forming an integrated circuit portion including a first conductive film over a substrate;

forming a first insulating film over the integrated circuit portion;

forming an antenna by stacking a plurality of second conductive films over the first insulating film with a second insulating film interposed therebetween;

forming an opening in the first insulating film, the second conductive films, and the second insulating film to expose the first conductive film;

forming a seed layer in the opening; and

forming a third conductive film over the seed layer by a plating process to electrically connect the first conductive film and the plurality of second conductive films.

16. The method for manufacturing a semiconductor device according to claim 15, wherein the third conductive film contains at least one of copper (Cu), nickel (Ni), gold (Au), platinum (Pt), silver (Ag), cobalt (Co), tin (Sn), and an alloy material and a compound material each including any of these elements.

17. The method for manufacturing a semiconductor device according to claim 15, wherein the semiconductor device is an RFID tag.

18. The method for manufacturing a semiconductor device according to claim 15, wherein the second insulating film is formed by subjecting the plurality of second conductive films to one of or both oxidation treatment and nitridation treatment.

22. The method for manufacturing a semiconductor device according to claim 15, wherein the seed layer contains at least one of copper (Cu), nickel (Ni), and chromium (Cr).