Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate
First Claim
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1. A method of fabricating a semiconductor device including forming a conductive layer buried-type substrate, the method comprising:
- forming a hydrogen ion implantation layer by implanting hydrogen ions under a first surface of a single crystal semiconductor substrate;
forming a conductive layer comprising a metal layer on the first surface of the single crystal semiconductor substrate;
forming an adhesion promotion layer on an upper surface of the conductive layer to improve an adhesion between the conductive layer and a silicon oxidation layer, which is formed after the conductive layer is formed;
forming the silicon oxidation layer on an upper surface of the adhesion promotion layer;
forming a preliminary conductive layer buried-type substrate by bonding the silicon oxidation layer to a supporting substrate; and
forming a conductive layer buried-type substrate comprising a single crystal semiconductor layer on the conductive layer by dividing the single crystal semiconductor substrate along the hydrogen ion implantation layer.
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Abstract
A conductive layer buried-type substrate is disclosed. The substrate includes a silicon oxidation layer bonded to a supporting substrate, an adhesion promotion layer that is formed on the silicon oxidation layer and improves an adhesion between the silicon oxidation layer and a conductive layer, wherein the conductive layer is formed on the adhesion promotion layer and comprises a metal layer, and a single crystal semiconductor layer formed on the conductive layer.
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13 Claims
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1. A method of fabricating a semiconductor device including forming a conductive layer buried-type substrate, the method comprising:
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forming a hydrogen ion implantation layer by implanting hydrogen ions under a first surface of a single crystal semiconductor substrate; forming a conductive layer comprising a metal layer on the first surface of the single crystal semiconductor substrate; forming an adhesion promotion layer on an upper surface of the conductive layer to improve an adhesion between the conductive layer and a silicon oxidation layer, which is formed after the conductive layer is formed; forming the silicon oxidation layer on an upper surface of the adhesion promotion layer; forming a preliminary conductive layer buried-type substrate by bonding the silicon oxidation layer to a supporting substrate; and forming a conductive layer buried-type substrate comprising a single crystal semiconductor layer on the conductive layer by dividing the single crystal semiconductor substrate along the hydrogen ion implantation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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