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Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate

  • US 8,354,308 B2
  • Filed: 08/30/2011
  • Issued: 01/15/2013
  • Est. Priority Date: 08/30/2010
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device including forming a conductive layer buried-type substrate, the method comprising:

  • forming a hydrogen ion implantation layer by implanting hydrogen ions under a first surface of a single crystal semiconductor substrate;

    forming a conductive layer comprising a metal layer on the first surface of the single crystal semiconductor substrate;

    forming an adhesion promotion layer on an upper surface of the conductive layer to improve an adhesion between the conductive layer and a silicon oxidation layer, which is formed after the conductive layer is formed;

    forming the silicon oxidation layer on an upper surface of the adhesion promotion layer;

    forming a preliminary conductive layer buried-type substrate by bonding the silicon oxidation layer to a supporting substrate; and

    forming a conductive layer buried-type substrate comprising a single crystal semiconductor layer on the conductive layer by dividing the single crystal semiconductor substrate along the hydrogen ion implantation layer.

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