Conductive polymer lid for a sensor package and method therefor

• US 8,354,747 B1
• Filed: 06/01/2010
• Issued: 01/15/2013
• Est. Priority Date: 06/01/2010
• Status: Active Grant

• Current Assignee: Amkor Technology Singapore Holding Pte., Ltd. (Amkor Technology Incorporated)
• Original Assignee: Amkor Technology Incorporated
• Inventors: Kuo, Bob Shih-Wei
• Primary Examiner(s): Nguyen, Ha Tran T
• Assistant Examiner(s): Tran, Thanh Y
• Application Number:
  US12/791,472
• Time in Patent Office: 959 Days
• Field of Search: 257/704, 257/706, 257/723, 257/734, 257/731, 257/733, 257/724, 257/678, 257/787, 257/737, 257/738, 257/779, 257/780, 257/781, 257/782, 257/783, 257/784, 257/666, 257/670, 257/672, 257/674, 257/675, 257/676, 257/677, 257/685, 257/659, 257/660, 257/416, 257/707, 257/710, 257/713, 257/732, 257/684, 257/686, 257/690, 257/778, 257/786, 438/121, 438/109, 438/110, 438/108, 438/118, 438/119, 438/125, 438/106, 438/122, 438/612, 438/613, 438/614
• US Class Current: 257/704
• CPC Class Codes: B81B 7/0061 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/16 of an individual bump connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/16151 : Cap comprising an aperture, e.g. for pressure control, encapsulation
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16153 : Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
• CPC Class Codes: H01L 2924/16251 : Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
• CPC Class Codes: H01L 2924/165 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2924/1659 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2924/1679 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/3511 : Warping

Abstract

A semiconductor device has a base substrate having a plurality of metal traces. A conductive polymer cover is provided having an opening. The conductive polymer cover forms a cavity when attached to the base substrate. At least one die is attached to an interior surface of the conductive polymer cover and positioned over the opening. The conductive polymer cover and the at least one die are electrically coupled to metal traces on the first surface of the base substrate.

Claims

1. A semiconductor device comprising:

a base substrate having a plurality of metal traces;

a conductive polymer cover having an opening formed on a top surface of the conductive polymer cover, the conductive polymer cover forming a cavity when attached to the base substrate;

at least one die attached to an interior surface of the conductive polymer cover and positioned over the opening;

an adhesive material applied on the at least one die to secure the at least one die to the interior surface of the conductive polymer cover over the opening to form an acoustic seal;

wherein the conductive polymer cover and the at least one die are electrically coupled to metal traces on the first surface of the base substrate.

2. A semiconductor device in accordance with claim 1, further comprising a conductive adhesive material applied to the metal traces on a first surface of the base substrate to electrically couple the conductive polymer cover and the at least one die to the metal traces on a first surface of the base substrate.

3. A semiconductor device in accordance with claim 1, wherein the at least one die has a plurality of stud bumps, the stud bumps electrically coupled to the metal traces on a first surface of the base substrate.

4. A semiconductor device in accordance with claim 3, further comprising a conductive adhesive material applied to the metal traces on a first surface of the base substrate to electrically couple the plurality of stud bumps to the metal traces on a first surface of the base substrate.

5. A semiconductor device in accordance with claim 4, wherein the conductive adhesive material is one of a conductive epoxy, solder paste, or combinations thereof.

6. A semiconductor device in accordance with claim 1, further comprising a bump structure formed on the conductive polymer cover to control bond line thickness.

7. A semiconductor device in accordance with claim 1, wherein the cavity formed by the conductive polymer cover has a plurality of chambers.

8. A semiconductor device in accordance with claim 1, wherein the conductive polymer cover comprises:

an approximately planer top member, the opening formed through the top member; and

side walls extending down from an interior surface of the top member.

9. A semiconductor device in accordance with claim 8, wherein the conductive polymer cover further comprises a plurality of bump structures formed on a distal end of the side walls.

10. A semiconductor device in accordance with claim 8, wherein the conductive polymer cover further comprises at least one compartmental wall extending down from an interior surface of the top member.

11. A semiconductor device comprising:

a substrate having a plurality of metal traces;

a conductive polymer lid having an opening formed in a top section thereof, the conductive polymer lid attached to at least one grounded metal trace on a first surface of the substrate, the conductive polymer lid forming a cavity when attached to the substrate;

a sensor die attached to an interior surface of the top section of the conductive polymer lid and positioned over the opening forming a seal over the opening;

an adhesive applied on the sensor die to secure the sensor die to the interior surface of the conductive polymer lid over the opening to form an acoustic seal;

a plurality of stud bumps formed on the sensor die and electrically coupled to at least one of the plurality of metal traces on the first surface of the substrate.

12. A semiconductor device in accordance with claim 11, further comprising a conductive adhesive material applied to the metal traces on the first surface of the substrate to electrically couple the conductive polymer lid and the sensor die to the metal traces on the first surface of the substrate.

13. A semiconductor device in accordance with claim 12, wherein the conductive adhesive material is one of a conductive epoxy, solder paste, or combinations thereof.

14. A semiconductor device in accordance with claim 11, further comprising a bump structure formed on the conductive polymer lid to control bond line thickness.

15. A semiconductor device in accordance with claim 11, wherein the cavity formed by the conductive polymer lid has a plurality of chambers.

16. A semiconductor device in accordance with claim 11, wherein the conductive polymer lid comprises:

an approximately planer top member, the opening formed through the top member; and

side walls extending down from an interior surface of the top member.

17. A semiconductor device in accordance with claim 16, wherein the conductive polymer lid further comprises a plurality of bump structures formed on a distal end of the side walls.

18. A semiconductor device in accordance with claim 16, wherein the conductive polymer lid further comprises at least one compartmental wall extending down from the interior surface of the top member.

19. A method of forming a semiconductor device comprising:

forming a conductive polymer lid having an opening formed in a top surface thereof;

attaching a semiconductor die to an interior of the top surface of the conductive polymer lid and over the opening to form a seal over the opening; and

flip attaching the conductive polymer lid and the semiconductor die to a first surface of a substrate;

wherein flip attaching the conductive polymer lid comprises;

applying a conductive adhesive material to metal traces formed on the first surface of the substrate; and

applying pressure to the conductive polymer lid to electrically couple side walls of the conductive polymer lid and solder bumps on the semiconductor die to the metal traces on the first surface of the substrate.