Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator

• US 8,357,264 B2
• Filed: 05/29/2008
• Issued: 01/22/2013
• Est. Priority Date: 05/29/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Shannon, Steven C., Ramaswamy, Kartik, Hoffman, Daniel J., Miller, Matthew L., Collins, Kenneth S.
• Primary Examiner(s): Kackar, Ram N.
• Application Number:
  US12/128,963
• Publication Number:
  US 20090294062A1
• Time in Patent Office: 1,699 Days
• Field of Search: 118/723.R, 156/345.24, 156/345.28, 156/345.43, 156/345.47, 156/345.44, 156/345.48
• US Class Current: 156/345.28
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

Claims

1. A plasma reactor including a chamber for processing a workpiece, comprising:

plural impedance matches and plural RF plasma power generators coupled to deliver respective RF plasma powers into said chamber through respective ones of said impedance matches;

a controller for generating a time-varying modulation control signal corresponding to a desired process transient cycle and an amplitude modulator coupled to modulate the output of a first one of said generators in response to said time-varying modulation control signal; and

a follower modulator coupled to modulate the output of a second one of said generators in response to said time-varying modulation control signal;

wherein;

said first generator provides a signal representing a measured level of RF power reflected back to the first generator, said signal being coupled to said controller; and

said controller being programmed to alter the degree of modulation of said second generator to minimize said measured level of RF power reflected back to said first generator.

2. The reactor of claim 1 wherein said first generator is an RF plasma source power generator, and wherein second generator is an RF bias power generator having a frequency at which over 80% of RF power contributes to plasma sheath thickness.

3. The reactor of claim 2 wherein said frequency of said RF bias power generator is in or below an LF frequency range.

4. The reactor of claim 1 wherein said follower modulator comprises an R-C circuit for imposing a delay in the output of said second generator relative to said control signal.

5. The reactor of claim 1 wherein said control signal corresponds to a transient that is one of (a) rectangular wave pulsing, (b) triangular wave.

6. A plasma reactor including a chamber with gas distribution apparatus for processing a workpiece, comprising:

an RF plasma source power applicator;

a source power impedance match and an RF plasma source power generator coupled to said RF plasma source power applicator through said source power impedance match;

a controller for providing a time-varying modulation control signal corresponding to a desired process transient cycle and an amplitude modulator coupled to modulate the output of said source power generator in response to said time-varying modulation control signal; and

an RF bias power generator operatively coupled to deliver RF bias power to said workpiece, and a follower modulator coupled to modulate the output of said RF bias power generator in response to said time-varying modulation control signal;

wherein;

said RF bias power generator has a frequency at which over 80% of RF power contributes to plasma sheath thickness;

said source power generator provides a signal representing a measured level of RF power reflected back to the source power generator, said signal being coupled to said controller; and

said controller being programmed to alter the degree of modulation of said bias power generator to minimize said measured level of RF power reflected back to said generator.

7. The reactor of claim 6 wherein said frequency of said RF bias power generator is in or below the LF frequency range.

8. The reactor of claim 6 wherein said follower modulator comprises an R-C circuit for imposing a delay in the modulation of said RF bias power generator relative to said control signal.