Reducing patterning variability of trenches in metallization layer stacks with a low-k material by reducing contamination of trench dielectrics
First Claim
1. A method, comprising:
- forming a via opening in a low-k dielectric layer formed above a substrate of a semiconductor device;
forming a protection layer on exposed surface portions of said low-k dielectric layer, said protection layer covering an upper surface of said low-k dielectric layer and sidewall surfaces of said via opening;
forming a planarization material on said protection layer, said planarization material filling said via opening and covering said upper surface of said low-k dielectric layer;
forming a trench opening in said planarization material formed above said upper surface of said low-k dielectric layer while removing a first portion of said planarization material from said via opening, wherein said trench opening is positioned above said via opening; and
forming a trench in said low-k dielectric layer on the basis of said trench opening in said planarization material.
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Accused Products
Abstract
By forming a protection layer prior to the application of the planarization layer during a dual damascene strategy for first patterning vias and then trenches, enhanced etch fidelity may be accomplished. In other aspects disclosed herein, via openings and trenches may be patterned in separate steps, which may be accomplished by different etch behaviors of respective dielectric materials and/or the provision of an appropriate etch stop layer, while filling the via opening and the trench with a barrier material and a highly conductive metal may be achieved in a common fill sequence. Hence, the via opening may be formed on the basis of a reduced aspect ratio, while nevertheless providing a highly efficient overall process sequence.
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Citations
21 Claims
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1. A method, comprising:
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forming a via opening in a low-k dielectric layer formed above a substrate of a semiconductor device; forming a protection layer on exposed surface portions of said low-k dielectric layer, said protection layer covering an upper surface of said low-k dielectric layer and sidewall surfaces of said via opening; forming a planarization material on said protection layer, said planarization material filling said via opening and covering said upper surface of said low-k dielectric layer; forming a trench opening in said planarization material formed above said upper surface of said low-k dielectric layer while removing a first portion of said planarization material from said via opening, wherein said trench opening is positioned above said via opening; and forming a trench in said low-k dielectric layer on the basis of said trench opening in said planarization material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method, comprising:
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forming a layer of low-k dielectric material above a metallization layer of a semiconductor device; forming via opening is said layer of low-k dielectric material and above a contact region formed in said metallization layer; forming a protection layer above said semiconductor device, said protection layer covering an upper surface of said layer of low-k dielectric material and sidewall and bottom surfaces of said via opening; forming a layer of planarization material above said semiconductor device, said layer of planarization material filling said via opening and covering said upper surface of said layer of low-k dielectric material; forming an etch mask above said layer of planarization material; forming trench opening in said etch mask and said layer of planarization material formed above said upper surface of said layer of low-k dielectric layer while removing a first portion of said planarization material from said via opening, wherein said trench opening is positioned above said via opening; forming a trench in said layer of low-k dielectric layer using said trench opening as a mask; and exposing said contact region in said metallization layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification