Thin film transistor liquid crystal display device

• US 8,357,937 B2
• Filed: 12/18/2007
• Issued: 01/22/2013
• Est. Priority Date: 12/19/2006
• Status: Expired due to Fees

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Kim, Dong-Yung, Lee, Chang-Bin
• Primary Examiner(s): Weiss, Howard
• Application Number:
  US12/000,909
• Publication Number:
  US 20080237596A1
• Time in Patent Office: 1,862 Days
• Field of Search: 257/59, 257/E21.414, 257/E29.291, 349/43
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/136236 using a grey or half tone lithographic process
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

A liquid crystal display (LCD) includes: a first substrate divided into a pixel part and first and second pad parts; a gate electrode and a gate line formed at the pixel part of the first substrate; an active pattern formed as an island on the gate electrode and having a width smaller than the gate electrode; an insulation film formed on the first substrate and having first and second contact holes exposing source and drain regions of the active pattern, respectively; source and drain electrodes formed at the pixel part of the first substrate and electrically connected with the source and drain regions of the active pattern via the first and second contact holes; a data line formed at the pixel part of the first substrate and crossing the gate line to define a pixel region; an etch stopper positioned between the source and drain electrodes and formed as an insulation film; a pixel electrode electrically connected with the drain electrode; and a second substrate attached with the first substrate in a facing manner.

Claims

1. A thin film transistor liquid crystal display (LCD) device comprising:

a first substrate divided into a pixel part and first and second pad parts;

a gate electrode and a gate line formed at the pixel part of the first substrate, wherein the gate electrode includes a top surface divided into a first region and a second region;

an active pattern as an island formed only on the first region of the top surface of the gate electrode, wherein the active pattern includes a top surface having a width smaller than that of the top surface of the gate electrode;

a first insulation film formed between the gate electrode and the active pattern, wherein the first insulation film includes a top surface having the same width as that of the top surface of the active pattern;

a second insulation film formed on the first substrate and having first and second contact holes exposing source and drain regions of the active pattern, respectively, wherein a portion of the said second insulation film is formed on the second region of the top surface of the gate electrode;

source and drain electrodes formed of an opaque conductive material at the pixel part of the first substrate and electrically connected with the source and drain regions of the active pattern via the first and second contact holes;

an ohmic-contact layer positioned at lower portions of the source and drain electrodes;

a data pad line formed of the opaque conductive material and formed on the second pad part of the first substrate;

source and drain electrode patterns formed of a transparent conductive material at upper parts of the source and drain electrodes, wherein the source and drain electrode patterns are respectively patterned in substantially the same form as the source and drain electrodes;

a data pad electrode formed of the transparent conductive material to cover the data pad line and electrically connected with the data pad line on the second pad part of the first substrate;

a data line formed at the pixel part of the first substrate and crossing the gate line to define a pixel region;

an etch stopper as an island positioned between the source and drain electrodes and formed as the second insulation film;

a pixel electrode electrically connected with the drain electrode, wherein a portion of the drain electrode pattern extends to the pixel region to form the pixel electrode; and

a second substrate attached with the first substrate in a facing manner.

2. The device of claim 1, further comprising

a gate pad line formed of a first conductive film that forms the gate electrode, and formed on the first pad part of the first substrate.

3. The device of claim 2, further comprising:

a gate pad electrode electrically connected with the gate pad line on the first pad part of the first substrate.

4. The device of claim 1, wherein the ohmic-contact layer is patterned in the same form as the source and drain electrodes to allow the source and drain regions and the source and drain electrodes to contact ohmically with each other.

5. The device of claim 1, wherein a portion of the pixel electrode overlaps with a portion of the gate line with the second insulation film interposed therebetween to form a storage capacitor.

6. The device of claim 1, further comprising:

an n+ amorphous silicon thin film pattern formed at a lower portion of the data line and patterned in the same form as the data line.