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Trench gate MOSFET and method of manufacturing the same

  • US 8,357,971 B2
  • Filed: 10/22/2008
  • Issued: 01/22/2013
  • Est. Priority Date: 10/29/2007
  • Status: Active Grant
First Claim
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1. A Trench field effect transistor (TrenchFET) comprisinga semiconductor body defining a first major surface,a first and a second region of a first conductivity type,a channel-accommodating third region therebetween of a second conductivity type opposite the first conductivity type,a trench extending from the first major surface into the semiconductor body, adjacent the first and channel-accommodating third regions and extending into the second region,a gate formed of electrically conducting material within the trench and spaced apart from the sidewalls and bottom of the trench,a shield region formed of electrically conducting material within the trench and between the gate and bottom of the trench and spaced apart therefrom,wherein the TrenchFET further comprisesa fourth region of the second conductivity type extending adjacent the sidewalls of the trench from the channel-accommodating third region towards the bottom of the trench, wherein the fourth region extends to a depth that is aligned to a top of the shield region, and wherein the fourth region is defined after the shield region is formed.

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