Buried traces for sealed electrostatic membrane actuators or sensors

• US 8,358,047 B2
• Filed: 09/29/2008
• Issued: 01/22/2013
• Est. Priority Date: 09/29/2008
• Status: Active Grant

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Gulvin, Peter M., Nystrom, Peter J.
• Primary Examiner(s): Leung, Quyen
• Assistant Examiner(s): KENERLY, TERRANCE L
• Application Number:
  US12/240,251
• Publication Number:
  US 20100077609A1
• Time in Patent Office: 1,576 Days
• Field of Search: 310/309, 361/283.1, 361/283.4, 737/18, 438/51, 257/415
• US Class Current: 310/309
• CPC Class Codes: B41J 2/14314 Structure of ink jet print heads with electrostatically actuated membrane
• CPC Class Codes: B41J 2/1621 Manufacturing processes
• CPC Class Codes: B41J 2/1629 wet etching
• CPC Class Codes: B41J 2/1639 sacrificial molding
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

In accordance with the invention, there are micro-electromechanical devices and methods of fabricating them. An exemplary micro-electromechanical device can include a first dielectric layer; a buried conductive trace disposed over the first dielectric layer, such that the buried conductor trace is electrically connected to an outside power source; a second dielectric layer disposed over the buried conductive trace; at least one conductive electrode disposed over the second dielectric layer and electrically connected to the buried conductive trace; and at least one conductive membrane including membrane anchors disposed over the second dielectric layer, such that the at least one conductive membrane is electrically isolated from the at least one conductive electrode and the buried conductor trace, wherein the at least one conductive electrode is electrically connected to the power source through the buried conductive trace.

Claims

1. A micro-electromechanical device comprising:

a first dielectric layer;

a buried conductive trace disposed over the first dielectric layer, such that the buried conductor trace is electrically connected to a power source;

a second dielectric layer disposed over the buried conductive trace, the second dielectric layer comprising one or more vias that extend up to the buried conductive trace, wherein the buried conductive trace is disposed between the first dielectric layer and the second dielectric layer;

at least one conductive electrode disposed over the second dielectric layer and electrically connected to the buried conductive trace through the one or more vias; and

at least one conductive membrane comprising membrane anchors disposed over the second dielectric layer, such that the at least one conductive membrane is electrically isolated from the at least one conductive electrode and the buried conductor trace and the at least one conductive electrode is within a sealed chamber,

wherein the sealed chamber is disposed below the at least one conductive membrane, wherein the at least one conductive membrane is capable of being deflected by a voltage being applied to the at least one conductive electrode, and wherein the at least one conductive electrode is electrically connected to the power source through the buried conductive trace.

2. The micro-electromechanical device of claim 1, wherein the first dielectric layer comprises an insulator substrate.

3. The micro-electromechanical device of claim 1, wherein the first dielectric layer comprises a first dielectric layer disposed over an electrically conductive substrate.

4. The micro-electromechanical device of claim 1, wherein the first dielectric layer comprises a field oxide layer.

5. The micro-electromechanical device of claim 1, wherein the buried conductive trace comprises doped polysilicon.

6. The micro-electromechanical device of claim 1, wherein the second dielectric layer disposed over the buried conductor layer comprises:

a silicon oxide layer disposed over the buried conductor layer; and

a silicon nitride layer disposed over the silicon oxide layer.

7. The micro-electromechanical device of claim 1, wherein the membrane anchors are disposed over one or more first conductive layer regions electrically isolated from the conductive electrode.

8. The micro-electromechanical device of claim 1, wherein the device is at least one of an actuator and a sensor.

9. A micro-electromechanical device comprising:

a first dielectric layer disposed over a dopant-doped substrate, the dopant-doped substrate comprising a first depart-well;

a second dielectric layer disposed over and directly adjacent to the first dielectric layer;

at least one via through the first and the second dielectric layer to form an electrical contact between the first dopant-well and a trace, wherein the trace is electrically connected to an outside power source;

at least one conductive electrode electrically connected to the first dopant-well; and

at least one conductive membrane comprising membrane anchors, the membrane anchors disposed over the second dielectric layer, such that the at least one conductive membrane is electrically isolated from the conductive electrodes and the substrate and the at least one conductive electrode is within a sealed chamber,

wherein the sealed chamber is disposed below the at least one conductive membrane, wherein the at least one conductive membrane is capable of being deflected by a voltage being applied to the at least one conductive electrode, and, wherein the at least one conductive electrode is electrically connected to the power source through the first dopant-well.

10. The micro-electromechanical device of claim 9, wherein the first dielectric layer comprises a field oxide layer.

11. The micro-electromechanical device of claim 9, wherein the second dielectric layer comprises a silicon nitride layer disposed over a field oxide layer.

12. The micro-electromechanical device of claim 9, wherein the membrane anchors are disposed over one or more first conductive layer regions electrically isolated from the conductive electrode.

13. The micro-electromechanical device of claim 9, wherein the device is at least one of an actuator and a sensor.