Method of manufacturing vertical gallium nitride based light emitting diode
First Claim
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1. A method of manufacturing a vertical GaN-based LED, comprising:
- forming a nitride-based buffer layer on a silicon substrate;
forming a p-type GaN layer on the nitride-based buffer layer;
sequentially forming an active layer and an n-type GaN layer on the p-type GaN layer;
forming an n-electrode on the n-type GaN layer;
forming a plating seed layer on the n-electrode;
forming a structure supporting layer on the plating seed layer;
removing the silicon substrate through wet etching and forming roughness on the entirety of a surface of the p-type GaN layer through over-etching;
forming a p-electrode on the p-type GaN layer having the roughness formed; and
forming a transparent conductive layer on the p-type GaN layer having the roughness formed thereon, prior to the forming of the p-electrode,wherein the removing the silicon substrate and the forming roughness on the entirety of the surface of the p-type GaN layer are performed in a single etching process of wet etching,wherein the p-type GaN layer has a thickness of more than 500 nm, andwherein the n-electrode is formed of Ta, Ti, Al, Ni and Au.
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Abstract
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.
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Citations
11 Claims
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1. A method of manufacturing a vertical GaN-based LED, comprising:
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forming a nitride-based buffer layer on a silicon substrate; forming a p-type GaN layer on the nitride-based buffer layer; sequentially forming an active layer and an n-type GaN layer on the p-type GaN layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the entirety of a surface of the p-type GaN layer through over-etching; forming a p-electrode on the p-type GaN layer having the roughness formed; and
forming a transparent conductive layer on the p-type GaN layer having the roughness formed thereon, prior to the forming of the p-electrode,wherein the removing the silicon substrate and the forming roughness on the entirety of the surface of the p-type GaN layer are performed in a single etching process of wet etching, wherein the p-type GaN layer has a thickness of more than 500 nm, and wherein the n-electrode is formed of Ta, Ti, Al, Ni and Au. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electronics Co. Ltd.
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InventorsLee, Jae Hoon, Lee, Jung Hee, Cho, Hyun Ick, Ro, Jae Chul, Kim, Dae Kil
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Primary Examiner(s)Landau, Matthew
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Assistant Examiner(s)Nicely, Joseph C
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Application NumberUS11/634,106Publication NumberTime in Patent Office2,246 DaysField of Search438 25- 28, 438/FOR.417, 438/22, 438/29, 438/31, 438/32, 438/36, 438/46, 438/47, 438/483, 438/745, 438749-751, 438/753, 438/567, 438/604, 438/656, 438/459, 257/79, 257/95, 257/103, 257/E21.085, 257/E21.459, 257/E33.043, 257/E33.067, 257/E33.068, 257/E33.003, 257/E33.005, 257/E33.006, 257/E33.071, 257/E33.074, 257/98, 257/E33.046, 257/E33.063US Class Current438/29CPC Class CodesH01L 21/02381 Silicon, silicon germanium,...H01L 21/02458 NitridesH01L 21/0254 NitridesH01L 33/007 comprising nitride compoundsH01L 33/22 Roughened surfaces, e.g. at...
