Aligned frontside backside laser dicing of semiconductor films
First Claim
1. A method for dicing semiconductor devices, comprising:
- providing a holder supporting a semiconductor film backed by a metal layer having a back surface bonded to a front surface of a substrate by an adhesive layer, the film having semiconductor devices thereupon and having an exposed front surface with reference features defining real or virtual device boundaries, and the flexible substrate having an exposed back surface;
directing an ultraviolet laser beam of a first wavelength to cut from the front surface of the film through the semiconductor film, through the metal layer and partially into the adhesive layer such that a majority of a thickness of the adhesive layer remains intact;
moving the semiconductor film and the ultraviolet laser beam relative to each other to cut using the device boundaries from the front surface of the film to form a first trough;
mapping the real or virtual device boundaries from the front surface of the semiconductor film to corresponding mapped real or virtual device boundaries on the back surface of the flexible substrate;
directing an infrared laser beam of a second wavelength to cut from the back surface of the flexible substrate through the flexible substrate and through the majority of the thickness of the adhesive layer; and
moving the semiconductor film and the infrared laser beam relative to each other to cut using the mapped device boundaries from the back surface of the flexible substrate and form a second trough using the mapped device boundaries meeting or overlapping the first trough thereby separating a one of the semiconductor devices from another of the semiconductor devices.
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Accused Products
Abstract
A method and system for dicing semiconductor devices from semiconductor thin films. A semiconductor film, backed by a metal layer, is bonded by an adhesive layer to a flexible translucent substrate. Reference features define device boundaries. An ultraviolet laser beam is aligned to the reference features and cuts through the semiconductor film, the metal layer and partially into the adhesive layer, cutting a frontside street along a real or imaginary scribe line on the cutting path. An infrared laser beam is aligned to the trough of the frontside street from the back surface of the flexible substrate, or the scribe lines are mapped to the back surface of the flexible substrate. The infrared laser beam cuts through the flexible substrate and the majority of the thickness of the adhesive layer, cutting a backside street along the scribe line. The backside street overlaps or cuts through to the frontside street, thereby separating the semiconductor devices.
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Citations
10 Claims
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1. A method for dicing semiconductor devices, comprising:
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providing a holder supporting a semiconductor film backed by a metal layer having a back surface bonded to a front surface of a substrate by an adhesive layer, the film having semiconductor devices thereupon and having an exposed front surface with reference features defining real or virtual device boundaries, and the flexible substrate having an exposed back surface; directing an ultraviolet laser beam of a first wavelength to cut from the front surface of the film through the semiconductor film, through the metal layer and partially into the adhesive layer such that a majority of a thickness of the adhesive layer remains intact; moving the semiconductor film and the ultraviolet laser beam relative to each other to cut using the device boundaries from the front surface of the film to form a first trough; mapping the real or virtual device boundaries from the front surface of the semiconductor film to corresponding mapped real or virtual device boundaries on the back surface of the flexible substrate; directing an infrared laser beam of a second wavelength to cut from the back surface of the flexible substrate through the flexible substrate and through the majority of the thickness of the adhesive layer; and moving the semiconductor film and the infrared laser beam relative to each other to cut using the mapped device boundaries from the back surface of the flexible substrate and form a second trough using the mapped device boundaries meeting or overlapping the first trough thereby separating a one of the semiconductor devices from another of the semiconductor devices. - View Dependent Claims (2, 3, 4, 5)
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6. A method for dicing solar cells from a semiconductor film, comprising:
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providing a semiconductor film that has a plurality of solar cells thereupon and is backed by a metal layer, the semiconductor film having a front surface; laminating the semiconductor film to a flexible and at least translucent substrate, using an adhesive layer to bond the substrate to the metal layer backing the semiconductor, the adhesive layer having a thickness and the substrate having a back surface; establishing reference features on the film; aligning an ultraviolet laser beam to a cutting path based upon the reference features from the front surface of the film; cutting a frontside street along the cutting path, using the aligned ultraviolet laser beam to cut from the front surface of the film through the film, through the metal layer and partially into the adhesive layer, a trough of the frontside street being visible from the back surface of the substrate through the substrate and through the adhesive layer; aligning an infrared laser beam to the trough of the frontside street from the back surface of the substrate; and cutting a backside street, using the aligned infrared laser beam to cut from the back surface of the flexible substrate through the substrate and through a majority of the thickness of the adhesive layer so that a trough of the backside street meets or overlaps the trough of the frontside street, thereby dicing the semiconductor film and substrate and separating a one of the solar cells from another of the solar cells. - View Dependent Claims (7, 8, 9, 10)
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Specification