Method for manufacturing memory element

• US 8,361,909 B2
• Filed: 11/26/2011
• Issued: 01/29/2013
• Est. Priority Date: 06/20/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nagata, Takaaki
• Primary Examiner(s): Lee, Cheung
• Application Number:
  US13/304,629
• Publication Number:
  US 20120070956A1
• Time in Patent Office: 430 Days
• Field of Search: 438/768, 257/E21.007, 257/E21.297, 257/E21.299, 257/E21.477, 257/E21.613
• US Class Current: 438/781
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H10B 63/00 Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Abstract

A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.

Claims

1. A method for manufacturing a memory element, comprising the steps of:

forming a first conductor and a second conductor over a substrate;

placing a conductive paste so as to fill up a space between the first conductor and the second conductor after forming the first conductor and the second conductor, the conductive paste comprising conductive particles each of which has a size of greater than or equal to 0.1 μ

m and less than or equal to 10 μ

m, a resin, and a solvent;

vaporizing the solvent to form a memory layer including the resin between the first conductor and the second conductor; and

forming a protective insulating layer over the memory layer.

2. The method for manufacturing a memory element according to claim 1,

wherein the conductive paste is placed by a droplet discharge method or a printing method.

3. The method for manufacturing a memory element according to claim 1,

wherein the solvent is vaporized at a temperature higher than or equal to 10°

C. and less than or equal to 280°

C.

4. The method for manufacturing a memory element according to claim 1,

wherein the conductive particles are silver particles.

5. The method for manufacturing a memory element according to claim 1,

wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, an urea resin, an acrylic resin or a cellulose resin.

6. A method for manufacturing a memory element, comprising the steps of:

forming a first conductor and a second conductor over a substrate;

placing a conductive paste so as to fill up a space between the first conductor and the second conductor after forming the first conductor and the second conductor, the conductive paste comprising conductive particles, a resin, and a solvent;

vaporizing the solvent to form a memory layer including the resin between the first conductor and the second conductor; and

forming a protective insulating layer over the memory layer.

7. The method for manufacturing a memory element according to claim 6,

wherein the conductive paste is placed by a droplet discharge method or a printing method.

8. The method for manufacturing a memory element according to claim 6,

wherein the solvent is vaporized at a temperature higher than or equal to 10°

C. and less than or equal to 280°

C.

9. The method for manufacturing a memory element according to claim 6,

wherein the conductive particles are silver particles.

10. The method for manufacturing a memory element according to claim 6,

wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, an urea resin, an acrylic resin or a cellulose resin.