Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same

  • US 8,362,455 B2
  • Filed: 12/20/2007
  • Issued: 01/29/2013
  • Est. Priority Date: 01/12/2007
  • Status: Active Grant
  • ×

    Create Patent Alert


    *Certain alert events are not available for your current subscription level. Upgrade
  • Save
    ×



    ×

    Thank you for your feedback

    ×
    ×