Electro-optic device with novel insulating structure and a method for manufacturing the same
First Claim
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1. An electro-optic device, comprising:
- an insulating layer;
a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type;
a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type; and
an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region, the electro-optic active region comprising;
a first semiconducting partial active region being doped with doping atoms of the first conductivity type;
a second semiconducting partial active region being doped with doping atoms of the second conductivity type;
wherein the material the first semiconducting partial active region is made of is different from the material the second semiconducting partial active region is made of; and
an insulating structure between the first semiconducting partial active region and the second semiconducting partial active region, wherein the insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first semiconducting partial active region and the second semiconducting partial active region in the direction perpendicular to the surface of the insulating layer.
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Abstract
An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first partial active region and a second partial active region and an insulating structure in between. The insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first partial active region and the second partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing is also disclosed.
51 Citations
21 Claims
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1. An electro-optic device, comprising:
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an insulating layer; a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type; a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type; and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region, the electro-optic active region comprising; a first semiconducting partial active region being doped with doping atoms of the first conductivity type; a second semiconducting partial active region being doped with doping atoms of the second conductivity type;
wherein the material the first semiconducting partial active region is made of is different from the material the second semiconducting partial active region is made of; andan insulating structure between the first semiconducting partial active region and the second semiconducting partial active region, wherein the insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first semiconducting partial active region and the second semiconducting partial active region in the direction perpendicular to the surface of the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. An electro-optic device, comprising:
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an insulating layer; a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type; a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type; and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region, the electro-optic active region comprising; a first semiconducting partial active region being doped with doping atoms of the first conductivity type; a second semiconducting partial active region being doped with doping atoms of the second conductivity type;
wherein the material the first semiconducting partial active region is made of is different from the material the second semiconducting partial active region is made of; andan insulating structure between the first semiconducting partial active region and the second semiconducting partial active region, wherein the insulating structure extends from the surface of the insulating layer through the electro-optic active region to the top of the electro-optic active region.
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Specification
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Current AssigneeAdvanced Micro Foundry Pte., Ltd.
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Original AssigneeAgency For Science Technology and Research
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InventorsLo, Guo-Qiang Patrick, Loh, Wei-Yip, Yu, Mingbin, Song, Junfeng, Wang, Kee-Soon Darryl
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Primary Examiner(s)Soward, Ida M
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Application NumberUS12/672,369Publication NumberTime in Patent Office2,001 DaysField of Search257/13, 257/21, 257/79, 257/80, 257/184, 257/466, 257/E31.003, 257/E31.005, 257/E31.032, 257/E31.038, 257/E33.005, 257/E33.006, 257/E33.012, 257/E33.014US Class Current257/79CPC Class CodesG02F 1/025 in an optical waveguide str...
