Optoelectronic semiconductor body
First Claim
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1. An optoelectronic semiconductor body, comprisinga substrate with a front from which electromagnetic radiation is to be emitted;
- a semiconductor layer sequence arranged at a rear side of the substrate, the semiconductor layer sequence having an active layer for generating the electromagnetic radiation;
a first and a second electrical connection layer arranged over a first surface of the semiconductor layer sequence that faces away from substrate; and
a mirror arranged on the first surface-of the semiconductor layer sequence facing away from the substrate in order to reflect a portion of the electromagnetic radiation generated by the active layer, wherein the minor has at least one recess and the first electrical connection layer has an electrically conductive contact in the at least one recess to the semiconductor layer sequence.
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Abstract
An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
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Citations
17 Claims
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1. An optoelectronic semiconductor body, comprising
a substrate with a front from which electromagnetic radiation is to be emitted; -
a semiconductor layer sequence arranged at a rear side of the substrate, the semiconductor layer sequence having an active layer for generating the electromagnetic radiation; a first and a second electrical connection layer arranged over a first surface of the semiconductor layer sequence that faces away from substrate; and a mirror arranged on the first surface-of the semiconductor layer sequence facing away from the substrate in order to reflect a portion of the electromagnetic radiation generated by the active layer, wherein the minor has at least one recess and the first electrical connection layer has an electrically conductive contact in the at least one recess to the semiconductor layer sequence. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification