Semiconductor light emitting device

• US 8,362,516 B2
• Filed: 03/27/2012
• Issued: 01/29/2013
• Est. Priority Date: 04/17/2006
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Inoue, Yoshiki, Sano, Masahiko
• Primary Examiner(s): SAYADIAN, HRAYR
• Application Number:
  US13/431,665
• Publication Number:
  US 20120181572A1
• Time in Patent Office: 308 Days
• Field of Search: 257/99, 257/E33.062, 257/E33.065, 257/81, 257/91, 257/734, 257/776, 257/786, 257/E33.055, 257/E33.066, 257/E23.043
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part.

Claims

1. A semiconductor light emitting device comprising:

a first electrode and a second electrode respectively provided on a first conductive type semiconductor layer and a second conductive type semiconductor layer on a same surface side,

the first conductive type semiconductor layer having a different conductive type from the second conductive type semiconductor layer, and

an insulating film disposed on the second electrode, and at least one opening in the insulating film exposing at least one region, said at least one region forming at least one external connecting part of the second electrode,

wherein in the same surface side;

the first electrode comprises a plurality of first electrodes arranged to form a one-dimensional first electrode array, wherein said first electrodes are not connected to each other in said surface side on the first conductive type semiconductor layer, and

each of said first electrodes in said plurality of first electrodes comprises a base part, and two extended parts extending from the base part,

such that said plurality of first electrodes comprise a plurality of said base parts,

wherein

said plurality of base parts are aligned in the one-dimensional direction of the first electrode array,

a first plurality of extended parts includes one of said two extended parts from each of said first electrodes,

a second plurality of extended parts includes the other of said two extended parts from each of said first electrodes,

said first plurality of extended parts are aligned in the one-dimensional direction of the first electrode array, on a first side of said plurality of base parts, and

said second plurality of extended parts are aligned in the one-dimensional direction of the first electrode array, on a second side opposite to said first side of said plurality of base parts, and

a portion of said at least one external connecting part of the second electrode is arranged in between two extended parts of different first electrodes in the first electrode array, such that said portion of said at least one external connecting part overlaps with the two extended parts of said different first electrodes, in the one-dimensional direction of the first electrode array.

2. The semiconductor light emitting device according to claim 1, wherein, in said surface side, said base part of one of said first electrodes has a curved shape.

3. The semiconductor light emitting device according to claim 1, wherein, in said surface side, the two extended parts of one of said first electrodes extend, along an extending direction, from opposite sides of the base part of said one first electrode.

4. The semiconductor light emitting device according to claim 1, wherein, in said surface side, another external connecting part of the second electrode is located between

an edge of said first conductive type semiconductor layer and

one of said first electrodes.

5. The semiconductor light emitting device according to claim 1, wherein, in said surface side,

the two extended parts of one of said first electrodes extend, along an extending direction, from opposite sides of the base part of said one first electrode, and

no external connecting part of the second electrode is provided along the extending direction that passes through said two extended parts.

6. The semiconductor light emitting device according to claim 1, wherein the first electrode comprises a first layer of an Al alloy.

7. The semiconductor light emitting device according to claim 1, wherein the first electrode comprises a first layer of an Al alloy at a contacting side with the first conductive type semiconductor layer, and a second layer on the first layer, and

the Al alloy contains Cu or Si and Cu.

8. The semiconductor light emitting device according to claim 1, wherein at least one of said first conductive type and second conductive type semiconductor layers comprises a nitride semiconductor.

9. The semiconductor light emitting device according to claim 8, wherein the nitride semiconductor comprises In_xAl_yGa_1-x-yN, 0≦

x, 0≦

y, and x+y≦

1.

10. The semiconductor light emitting device according to claim 6, wherein at least one of said first conductive type and second conductive type semiconductor layers comprises a nitride semiconductor.

11. The semiconductor light emitting device according to claim 2, wherein, in said surface side, the two extended parts of one of said first electrodes extend, along an extending direction, from opposite sides of the base part of said one first electrode.

12. The semiconductor light emitting device according to claim 11, wherein at least one of said first conductive type and second conductive type semiconductor layers comprises a nitride semiconductor.

13. The semiconductor light emitting device according to claim 12, wherein the first electrode comprises an Al alloy.

14. The semiconductor light emitting device according to claim 2, wherein, in said surface side, another external connecting part of the second electrode is located between

an edge of said first conductive type semiconductor layer and

one of said first electrodes.

15. The semiconductor light emitting device according to claim 14, wherein at least one of said first conductive type and second conductive type semiconductor layers comprises a nitride semiconductor.

16. The semiconductor light emitting device according to claim 15, wherein the first electrode comprises an Al alloy.

17. The semiconductor light emitting device according to claim 2, wherein, in said surface side,

the two extended parts of one of said first electrodes extend, along an extending direction, from opposite sides of the base part of said one first electrode, and

no external connecting part of the second electrode is provided along the extending direction that passes through said two extended parts.

18. The semiconductor light emitting device according to claim 17, wherein, in said surface side, another external connecting part of the second electrode is located between

an edge of said first conductive type semiconductor layer and

one of said first electrodes.

19. The semiconductor light emitting device according to claim 18, wherein at least one of said first conductive type and second conductive type semiconductor layers comprises a nitride semiconductor.

20. The semiconductor light emitting device according to claim 19, wherein the first electrode comprises an Al alloy.

21. The semiconductor light emitting device according to claim 1, wherein

said at least one opening in the insulating film comprises a plurality of openings in the insulating film which are separated from each other, exposing regions which are external connecting parts of the second electrode spaced from each other,

wherein in said surface side:

a plurality of the external connecting parts of the second electrode are arranged to form a second electrode array substantially parallel to the first electrode array, and the second electrode array is provided to partially overlap with extended parts of different first electrodes, in the one-dimensional direction of the first electrode array.