Field effect device having a channel of nanofabric and methods of making same
First Claim
1. A method of making a nanotube field effect transistor, comprising:
- providing a substrate;
forming a non-woven fabric of carbon nanotubes on the substrate, wherein at least one of the nanotubes includes a functional material adsorbed on a surface of the nanotubes, the functional material providing charge transfer states on the nanotubes;
forming a drain region and a source region in spaced relation relative to each other;
forming a channel region by patterning the non-woven fabric of nanotubes, wherein the nanotubes of the channel region comprise semiconducting nanotubes, and wherein the length of the channel region between the drain region and the source region is less than the average length of the semiconducting nanotubes; and
forming at least one gate that may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain region and the source region, wherein forming the at least one gate comprises;
depositing a conductive layer in proximity to the channel region; and
patterning the conductive layer to a length that is similar to the length of the channel region.
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Abstract
Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.
124 Citations
46 Claims
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1. A method of making a nanotube field effect transistor, comprising:
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providing a substrate; forming a non-woven fabric of carbon nanotubes on the substrate, wherein at least one of the nanotubes includes a functional material adsorbed on a surface of the nanotubes, the functional material providing charge transfer states on the nanotubes; forming a drain region and a source region in spaced relation relative to each other; forming a channel region by patterning the non-woven fabric of nanotubes, wherein the nanotubes of the channel region comprise semiconducting nanotubes, and wherein the length of the channel region between the drain region and the source region is less than the average length of the semiconducting nanotubes; and forming at least one gate that may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain region and the source region, wherein forming the at least one gate comprises; depositing a conductive layer in proximity to the channel region; and patterning the conductive layer to a length that is similar to the length of the channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 19, 20, 21, 22, 23, 24, 25, 26)
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18. The method of claim, wherein the carbon nanotubes comprise one of single-wall carbon nanotubes, multi-wall carbon nanotubes, and a combination thereof.
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27. A method of making a nanotube field effect transistor, comprising:
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providing a substrate; forming a non-woven fabric of nanotubes on the substrate; forming a drain region and a source region in spaced relation relative to each other; forming a channel region by patterning the non-woven fabric of nanotubes, wherein the nanotubes of the channel region comprise semiconducting nanotubes, and wherein the length of the channel region between the drain region and the source region is less than the average length of the semiconducting nanotubes; and forming at least one gate that may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain region and the source region, wherein forming the at least one gate comprises; depositing a conductive layer in proximity to the channel region; and patterning the conductive layer to a length that is similar to the length of the channel region; wherein the forming of the channel region includes removing metallic nanotubes in the nanotubes of the channel region, wherein the removing of the metallic nanotubes comprises subiectinq the metallic nanotubes to electrical stimulation so as to fail all of the metallic nanotubes; wherein the substrate is an active substrate including circuitry therein that may be used to electrically stimulate and fail the metallic nanotubes; and wherein the circuitry to electrically stimulate and fail the metallic nanotubes operates before completion of the formation the at least one gate.
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28. A nanotube field effect transistor comprising:
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a drain region and a source region in spaced relation relative to each other; a channel region connecting the drain region and the source region, wherein the channel region is formed of a patterned non-woven fabric of carbon nanotubes comprising semiconducting nanotubes, wherein the length of the channel region between the drain region and the source region is less than the average length of the semiconducting nanotubes, and wherein at least one of the nanotubes includes a functional material adsorbed on a surface of the nanotubes, the functional material providing charge transfer states on the nanotubes; and at least one gate formed from a patterned conductive layer having a length that is similar to the length of the channel region and being located in proximity to the channel region, wherein the at least one gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain region and the source region. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A method of making a plurality of nanotube field effect transistors, comprising:
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providing a substrate; forming a fabric of carbon nanotubes on the substrate, wherein at least one of the nanotubes includes a functional material adsorbed on a surface of the nanotubes, the functional material providing charge transfer states on the nanotubes; forming a drain region and a source region in spaced relation relative to each other for each nanotube field effect transistor in the plurality of nanotube field effect transistors; forming a channel region for each nanotube field effect transistor in the plurality of nanotube field effect transistors, wherein forming the channel region comprises; patterning the fabric of nanotubes; and forming a gate for each nanotube field effect transistor in the plurality of nanotube field effect transistors, wherein the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain region and the source region for each nanotube field effect transistor in the plurality of nanotube field effect transistors. - View Dependent Claims (43, 44, 45, 46)
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Specification