MOS device with Schottky barrier controlling layer
First Claim
1. A semiconductor device formed on a semiconductor substrate, comprising:
- an epitaxial layer overlaying the semiconductor substrate;
a drain formed on back of the semiconductor substrate;
a drain region that extends into the epitaxial layer; and
an active region comprising;
a body disposed in the epitaxial layer, having a body top surface;
a source embedded in the body, extending from the body top surface into the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench extending through the source and the body into the drain region;
an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain region form a Schottky diode; and
a Schottky barrier controlling layer that is disposed in the epitaxial layer adjacent to the active region contact trench and that does not extend into the body.
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Accused Products
Abstract
A semiconductor device formed on a semiconductor substrate includes: an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; and an active region. The active region includes: a body disposed in the epitaxial layer, having a body top surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body into the drain region; an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain region form a Schottky diode; and a Schottky barrier controlling layer.
70 Citations
14 Claims
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1. A semiconductor device formed on a semiconductor substrate, comprising:
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an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; and an active region comprising; a body disposed in the epitaxial layer, having a body top surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body into the drain region; an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain region form a Schottky diode; and a Schottky barrier controlling layer that is disposed in the epitaxial layer adjacent to the active region contact trench and that does not extend into the body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification