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Contact structure for semiconductor device having trench shield electrode and method

  • US 8,362,548 B2
  • Filed: 11/14/2008
  • Issued: 01/29/2013
  • Est. Priority Date: 11/14/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device structure comprising:

  • a region of semiconductor material having a major surface;

    a first trench structure formed in the region of semiconductor material, wherein the first trench structure includes a control electrode layer and a shield electrode layer;

    a contact structure formed in the region of semiconductor material, wherein the first trench structure terminates in the contact structure, and wherein upper surfaces of both the control electrode layer and the shield electrode layer in the contact structure are recessed within the first trench without overlapping the major surface of the region of semiconductor material in the contact structure;

    a first conductive layer coupled to the control electrode layer within the first trench structure; and

    a second conductive layer coupled to the shield electrode layer within the first trench structure.

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